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SI4435DDY-T1-E3

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SI4435DDY-T1-E3

Manufacturer
Description
Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R MOSFET P-CH 30V 11.4A 8SOIC MOSFET 30V 11.4A 5.0W 24mohm @ 10V MOSFET, P CH, 30V, 11.4A, 8SOIC Transistor: P-MOSFET; unipolar; -30V; -8.1A; 2.5W; SO8
Category
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Business

MOQ2500Unit Pack2500
Other NamesSI4435DDY-T1-E3CTPart # AliasesSI4435DDY-E3
Product CategoryMOSFETStandard PackageTape & Reel
Factory Pack Quantity2500Standard Package NameSOIC

Compliance

RoHSLead free / RoHS CompliantEU RoHSCompliant
Tariff No85412900

Electrical

FET TypeMOSFET P-Channel, Metal OxideFall Time12 ns, 16 ns
Vgs (Max)±20 VFET FeatureStandard
Power - Max5WPower - Rated2.5 W
Fall Time (Typ)12|16 nsRise Time (Typ)8 ns, 35 ns
Transistor TypeP-ChannelDelay to 1st Tap45|40 ns
Number of Elements1Vgs(th) (Max) @ Id3V @ 250µA
Voltage - Breakdown30 VVoltage - Threshold:-3V
Resistance - RDS(On):0.0195ohmRds On (Max) @ Id, Vgs24@10V mOhm
Power Dissipation (Max):5WPropagation Delay (Max)8|35 ns
Vce(on) (Max) @ Vge, Ic30 VOn-State Resistance (Max)24@10V
Gate Charge (Qg) (Max) @ Vgs50nC @ 10VSwitch Time (Ton, Toff) (Max)10|42 ns
Drain to Source Voltage (Vdss)30VCurrent - Peak Pulse (10/1000us)8.1 A
Voltage - Gate Trigger (Vgt) (Max)+/- 20 VCurrent - Drain (Idss) @ Vds (Vgs=0)8.1 A
Input Capacitance (Ciss) (Max) @ Vds1350pF @ 15VCurrent - Continuous Drain (Id) @ 25degC8.1A (Ta), 11.4A (Tc)

Mechanical

Width4(Max)Weight0.002
PackagingTape and ReelLead StyleGull-wing
Mounting TypeSurface MountMounting StyleSMD/SMT
Number of Pins:8Package / Case8SOIC N
Material Finish:MSL 1 - UnlimitedLength - Overall5(Max)
Package QuantitySOIC NNumber of Positions8
Shell Size - Insert1.5(Max)Supplier Device Package8-SOIC N

Product Info

Spg1000Polarityunipolar
Channel TypePConfigurationSingle
Number of Units1Printed Circuit Board8

Environmental

Operating Temperature-55 to 150 °C

Documents & Media

PDF Document
PDF Document
Online Document