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IRF9333PBF
| Manufacturer | |
| Description | MOSFET P-CH 30V 9.2A 8-SO Infineon HEXFET 系列 P沟道 MOSFET 晶体管 IRF9333TRPBF, 9.2 A, Vds=30 V, 8针 SOIC封装 MOSFET 20V FETKY-30V MOSFET 19.4mOhms 14nC |
| Category |
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Business
| Factory Pack Quantity | 95 | ||
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Vgs (Max) | 20 V | Gate Charge | 14 nC |
| Delay Time - ON | 16 ns | Output Function | 增强 |
| Transistor Type | 单 | Delay Time - OFF | 55 ns |
| Voltage - Supply | 30 V | Number of Elements | 1 |
| Resistance - Input | 19.4 mΩ | Vgs(th) (Max) @ Id | 2.4V |
| Power - Average Forward | 2.5 W | Power Dissipation (Max) | 2500 mW |
| Vce(on) (Max) @ Vge, Ic | - 30 V | On-State Resistance (Max) | 32.5 mOhms |
| Gate Charge (Qg) (Max) @ Vgs | ±20 V | Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25degC | 9.2 A | ||
Mechanical
| Width | 3.99mm | Height | 1.57mm |
| Length | 4.98mm | Packaging | Tube |
| Mounting Type | 表面贴装 | Mounting Style | SMD/SMT |
| Number of Pins | 8 | Package / Case | SO-8 |
| Package Quantity | SOIC | Size / Dimension | 4.98 x 3.99 x 1.57mm |
Product Info
| Series | HEXFET | Function | Y |
| Technology | Si | Channel Type | P |
| Manufacturer | Infineon / IR | Card Standard | 功率 MOSFET |
Environmental
| Operating Temperature | 150 °C | ||
Documents & Media
PDF Document
PDF Document
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