点击放大查看

CSD86350Q5D

Business

RoHS	Contains lead / RoHS non-compliant	EU RoHS	Compliant
Part Status	ACTIVE	Rad Hardened	No

Current	25	FET Type	2 N-Channel (Half Bridge)
Fall Time	21 ns	Vgs (Max)	10
FET Feature	Logic Level Gate	Power - Max	13W
Power Level	2.8	Delay Time - ON	8 ns，9 ns
Output Function	增强	Rise Time (Typ)	23 ns
Transistor Type	Si	Delay Time - OFF	9 ns, 24 ns
Voltage - Supply	25 V	Number of Channels	2 Channel
Number of Elements	2	Resistance - Input	1.1 mΩ，5 mΩ
Vgs(th) (Max) @ Id	2.1V @ 250µA	Rds On (Max) @ Id, Vgs	6 mOhm @ 20A, 8V
Power - Average Forward	13 W	Power Dissipation (Max)	13 W
Vce(on) (Max) @ Vge, Ic	25	On-State Resistance (Max)	5 mOhms, 1.1 mOhms
Gate Charge (Qg) (Max) @ Vgs	10.7nC @ 4.5V	Drain to Source Voltage (Vdss)	25V
Input Capacitance (Ciss) (Max) @ Vds	1870pF @ 12.5V	Current - Continuous Drain (Id) @ 25degC	40A

Type	Synchronous Buck MOSFET Driver	Series	NexFET™
DELETED	Compliant	Function	Y
Software	SLPS223E	Technology	Si
Channel Type	N	Manufacturer	Texas Instruments
Configuration	PowerBlock	Pattern Number	Y
Development Kit	CSD86350Q5DEVM-604	Functional Diagram	alt_slps223e.gif
Utilized IC / Part	View	Printed Circuit Board	8