点击放大查看

CSD17307Q5A

Business

RoHS	Contains lead / RoHS non-compliant	SVHC	:No SVHC (20-Jun-2013)
EU RoHS	Compliant	Tariff No	85412900
Part Status	ACTIVE	Rad Hardened	No

FET Type	MOSFET N-Channel, Metal Oxide	Vgs (Max)	10 V
FET Feature	Standard	Gate Charge	4 nC
Power - Max	3W	Noise Figure	Not Required dB
Power - Rated	3 W	Power - Output	Not Required dB
Fall Time (Typ)	2.6 ns	Frequency - Max	Not Required MHz
Transistor Type	N-Channel	Delay to 1st Tap	9.3 ns
Number of Elements	1	Vgs(th) (Max) @ Id	1.8V @ 250µA
Voltage - Breakdown	30 V	Voltage - Threshold	:1.3V
Current Rating (Max)	:73A	Resistance - RDS(On)	:8.4mohm
Rds On (Max) @ Id, Vgs	10.5@8V mOhm	Power Dissipation (Max)	:3W
Propagation Delay (Max)	6.7 ns	Vce(on) (Max) @ Vge, Ic	30 V
Current Drain (Id) - Max	14 A	Logic Voltage - VIL, VIH	Yes
On-State Resistance (Max)	10.5@8V	Current Transfer Ratio (Min)	66 S
Gate Charge (Qg) (Max) @ Vgs	5.2nC @ 4.5V	Current - Peak Pulse (8/20us)	92
Switch Time (Ton, Toff) (Max)	4.6 ns	Vce Saturation (Max) @ Ib, Ic	Not Required %
Drain to Source Voltage (Vdss)	30V	Current - Peak Pulse (10/1000us)	14 A
Voltage - Gate Trigger (Vgt) (Max)	10 V	Current - Drain (Idss) @ Vds (Vgs=0)	73 A
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 15V	Current - Continuous Drain (Id) @ 25degC	14A (Ta), 73A (Tc)