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SIA430DJ-T1-GE3

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SIA430DJ-T1-GE3

Manufacturer
Description
MOSFET 20V 12A 19.2W 13.5mohm @ 10V Trans MOSFET N-CH 20V 12A 6-Pin PowerPAK SC-70 T/R N-CHANNEL-FET 12A 20V PP-SC70-6 MOSFET N-CH 20V 12A SC70-6 N CHANNEL MOSFET, 20V, 12A, SC-70
Category
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Business

MOQ3000Unit Pack3000
Other NamesSIA430DJ-T1-GE3CTPart # AliasesSIA430DJ-GE3
Product CategoryMOSFETStandard Package3,000
Factory Pack Quantity3000Standard Package NameSOT-23

Compliance

RoHSRoHS CompliantEU RoHSCompliant
Tariff No85412900Leadfree DefinRoHS-conform

Electrical

FET TypeMOSFET N-Channel, Metal OxideFall Time10 ns, 8 ns
Vgs (Max):20VFET FeatureStandard
Power - Max19.2WPower - Rated3.5 W
Rise Time (Typ)10 ns, 8 nsTransistor TypeN-Channel
Delay to 1st Tap15 ns, 17 nsNumber of Elements1
Vgs(th) (Max) @ Id3V @ 250µAVoltage - Breakdown20
Voltage - Threshold:3VResistance - RDS(On):18.5mohm
Rds On (Max) @ Id, Vgs0.0135 OhmsPower Dissipation (Max)3500
Vce(on) (Max) @ Vge, Ic20 VPower (Watts) - Per Port19W
On-State Resistance (Max)13.5@10VVoltage - Supply (Vcc/Vdd)20V
Gate Charge (Qg) (Max) @ Vgs18nC @ 10VDrain to Source Voltage (Vdss)20V
Current - Peak Pulse (10/1000us)12Voltage - Gate Trigger (Vgt) (Max)+/- 20 V
Current - Drain (Idss) @ Vds (Vgs=0)12 AInput Capacitance (Ciss) (Max) @ Vds800pF @ 10V
Current - Continuous Drain (Id) @ 25degC12A (Tc)

Mechanical

Width2.05Weight0
PackagingReelLead StyleNo Lead
Mounting TypeSurface MountMounting StyleSMD/SMT
Number of Pins:6Package / CasePowerPAK SC-70-6L
Length - Overall2.05Package QuantityPowerPAK SC-70
Number of Positions6Shell Size - Insert0.75
Supplier Device PackagePowerPAK® SC-70-6 Single

Product Info

PolarityN CHAN.MatchcodeSIA430DJ
Channel TypeNConfigurationSingle Quad Drain Dual Source
Standard Leadtime15 weeksPrinted Circuit Board6

Environmental

Operating Temperature+ 150 C

Documents & Media

PDF Document
PDF Document