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IRFHS8242TRPBF

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IRFHS8242TRPBF

Manufacturer
Description
MOSFET N-CH 25V 9.9A PQFN Infineon HEXFET 系列 Si N沟道 MOSFET , 21 A, Vds=25 V, 6针 PQFN封装 MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC
Category
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Business

Factory Pack Quantity4000

Compliance

RoHSRoHS Compliant

Electrical

Fall Time5.3 nsVgs (Max)20 V
Gate Charge4.3 nCDelay Time - ON6.5 ns
Output Function增强Rise Time (Typ)19 ns
Transistor TypeSiDelay Time - OFF5.4 ns
Delay to 1st Tap5.4 nsVoltage - Supply25 V
Number of Channels1 ChannelNumber of Elements1
Resistance - Input21 mΩVgs(th) (Max) @ Id2.35V
Power - Average Forward2.1 WPower Dissipation (Max)2.1 W
Vce(on) (Max) @ Vge, Ic25 VOn-State Resistance (Max)17 mOhms
Current Transfer Ratio (Min)19 SGate Charge (Qg) (Max) @ Vgs±20 V
Switch Time (Ton, Toff) (Max)6.5 nsInput Capacitance (Ciss) (Max) @ Vds653 pF @ 10 V
Current - Continuous Drain (Id) @ 25degC21 A

Mechanical

Width2.1mmHeight0.95mm
Length2.1mmPackagingReel
Mounting Type表面贴装Mounting StyleSMD/SMT
Number of Pins6Package / CasePQFN-6
Package QuantityPQFNSize / Dimension2.1 x 2.1 x 0.95mm

Product Info

SeriesHEXFETFunctionY
TechnologySiChannel TypeN
ManufacturerInfineon TechnologiesCard Standard功率 MOSFET
ConfigurationSingle Quint Drain Dual Source

Environmental

Operating Temperature+150 °C

Documents & Media

PDF Document
PDF Document