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SI3552DV-T1-E3

Manufacturer	Vishay Intertechnology, Inc.
Description	Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R MOSFET N/P-CH 30V 2.5/1.8A 6TSOP MOSFET;Dual; Complementary; 30V; 2.5/1.8A; TSOP-6 MOSFET 30V 2.5/1.8A MOSFET,Dual,Complementary,30V,2.5/1.8A,TSOP-6
Category	Integrated CircuitsLogic ICsStandard Logic ICs

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RoHS

Lead free / RoHS Compliant

EU RoHS

Compliant

FET Type	N and P-Channel	Vgs (Max)	±20 V
FET Feature	Logic Level Gate	Power - Max	1.15W
Power - Rated	1.15 W	Delay Time - ON	7/8ns
Fall Time (Typ)	5@N Channel\|7@P Channel ns	Transistor Type	N and P-Channel
Delay Time - OFF	13/12ns	Delay to 1st Tap	13@N Channel\|12@P Channel ns
Voltage - Supply	0.81/-0.83V	Number of Elements	2
Vgs(th) (Max) @ Id	1V @ 250µA	Voltage - Breakdown	30 V
Rds On (Max) @ Id, Vgs	105@10V@N Channel\|200@10V@P Channel mOhm	Power Dissipation (Max)	1.15W
Propagation Delay (Max)	9@N Channel\|12@P Channel ns	Vce(on) (Max) @ Vge, Ic	+/- 30 V
On-State Resistance (Max)	0.105/0.2Ohms	Current Transfer Ratio (Max)	4.3/2.4S
Gate Charge (Qg) (Max) @ Vgs	3.2nC @ 5V	Switch Time (Ton, Toff) (Max)	7@N Channel\|8@P Channel ns
Drain to Source Voltage (Vdss)	30V	Current - Peak Pulse (10/1000us)	2.5@N Channel\|1.8@P Channel A
Voltage - Gate Trigger (Vgt) (Max)	+/- 20 V	Current - Drain (Idss) @ Vds (Vgs=0)	2.5 A, 1.8 A
Current - Continuous Drain (Id) @ 25degC	2.5A, 1.8A