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SI3552DV-T1-GE3

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SI3552DV-T1-GE3

Manufacturer
Description
Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R N+P-FET 2/1,2A30V TSOP-6 MOSFET N/P-CH D-S 30V 6-TSOP MOSFET 30V 2.5/1.8A 1.15W 105/200mohm @ 10V
Category
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Business

MOQ3000Unit Pack3000
Other NamesSI3552DV-T1-GE3CTPart # AliasesSI3552DV-GE3
Product CategoryMOSFETStandard PackageTape & Reel
Standard Package NameTSOP

Compliance

RoHSLead free / RoHS CompliantEU RoHSCompliant
Rad HardenedNoLeadfree DefinRoHS-conform

Electrical

FET TypeN and P-ChannelVgs (Max)±20 V
FET FeatureLogic Level GatePower - Max1.15W
Power - Rated1.15 WFall Time (Typ)5@N Channel|7@P Channel ns
Transistor TypeN and P-ChannelDelay to 1st Tap13@N Channel|12@P Channel ns
Number of Elements2Vgs(th) (Max) @ Id1V @ 250µA
Voltage - Breakdown30 VRds On (Max) @ Id, Vgs105@10V@N Channel|200@10V@P Channel mOhm
Power Dissipation (Max)1150Propagation Delay (Max)9@N Channel|12@P Channel ns
Vce(on) (Max) @ Vge, Ic+/- 30 VPower (Watts) - Per Port1.15W
On-State Resistance (Max)105@10V@N Channel|200@10V@P ChannelVoltage - Supply (Vcc/Vdd)30V
Gate Charge (Qg) (Max) @ Vgs3.2nC @ 5VSwitch Time (Ton, Toff) (Max)7@N Channel|8@P Channel ns
Drain to Source Voltage (Vdss)30VCurrent - Peak Pulse (10/1000us)2.5@N Channel|1.8@P Channel A
Voltage - Gate Trigger (Vgt) (Max)+/- 20 VCurrent - Drain (Idss) @ Vds (Vgs=0)2A
Current - Continuous Drain (Id) @ 25degC2.5A, 1.8A

Mechanical

Width1.65PackagingTape and Reel
Lead StyleGull-wingMounting TypeSurface Mount
Mounting StyleSMD/SMTPackage / Case6TSOP
Package CooledTSOPLength - Overall3.05
Package QuantityTSOPNumber of Positions6
Shell Size - Insert1(Max)Supplier Device Package6-TSOP

Product Info

TypePower MOSFETPolarityN+P CHANN
MatchcodeSI3552DVChannel TypeN|P
ConfigurationDualStandard Leadtime14 weeks
Printed Circuit Board6

Environmental

Operating Temperature-55 to 150 °C

Documents & Media

PDF Document
Online Document
Online Document