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BPW85
| Manufacturer | |
| Description | Phototransistor Chip Silicon 850nm 2-Pin T-1 Phototransistors NPN Phototransistor 70V 100mW 850nm PHOTOTRANSISTOR NPN 3MM CLEAR PHOTOTRANSISTOR, T1 TRANSISTOR, PHOTO, NPN, 850NM, T-1 3mmPhototransistorIR850nm Vishay 红外+可见光 光电晶体管 , ±25 °半感光角度, 450 → 1080 nm, 3mm (T-1) 封装 |
| Category |
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Business
| Product | Phototransistors | Other Names | 751-1023 |
| Product Category | Phototransistors | Standard Package | Bulk, Tape & Reel |
| Factory Pack Quantity | 5000 | Standard Package Name | T-1 |
Compliance
| RoHS | RoHS Compliant | EU RoHS | Compliant |
| Tariff No | 85414090 | ||
Electrical
| Fall Time | 2.3 us | Wavelength | 850 nm |
| Power - Max | 150mW | Sensitivity | :4.0@1 |
| Sensing Angle | 50 ° | Viewing Angle | Top View |
| Rise Time (Typ) | 2 us | Transistor Type | Phototransistor |
| Voltage - Supply | 70 V | Wavelength - Peak | 850 nm |
| Number of Channels | 1 | Current - Dark (Max) | 200 nA |
| Current - Dark (Typ) | :50mA | Vce Saturation (Max) | 0.3 V |
| Voltage - Input (Min) | 5 V | Power - Average Forward | :100mW |
| Power Dissipation (Max) | 100 mW | Current - Dark (Id) (Max) | 200nA |
| Voltage - Supply (Vcc/Vdd) | :5V | Switch Time (Ton, Toff) (Max) | :1.5µs |
| Current - Collector (Ic) (Max) | 50 mA | ||
Mechanical
| Weight | 0.0005 | Packaging | Bulk |
| Lead Style | Through Hole | Lens Color | Clear |
| Lens Style | Domed | Orientation | Top View |
| Lead Spacing | :2.54mm | Lens Diameter | 3 mm |
| Mounting Type | Through Hole | Number of Pins | :2 |
| Package / Case | 2T-1 | Package Quantity | T-1 |
| Diameter - Outside | 3.4 | Number of Positions | 2 |
| Shell Size - Insert | 4.5 | ||
Product Info
| Type | Chip | Polarity | NPN |
| Printed Circuit Board | 2 | ||
Environmental
| Operating Temperature | + 100 C | ||
Documents & Media
PDF Document
