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BSS138LT1G

Manufacturer	onsemi
Description	Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R MOSFET N-CH 50V 200MA SOT-23 BSS138LT1G, N-channel MOSFET Transistor 0.2A 50V, 3-Pin SOT-23 MOSFET, N CH, 50V, 200MA, SOT-23-3 MOSFET, N, 50V, 0.2A, SOT-23 MOSFET,Power;N-Ch;VDSS50VDC;RDS(ON)3.5Ohms;ID200mA;SOT-23(TO-236);PD225mW ON Semiconductor , N沟道 MOSFET, 200 mA, Vds=50 V, 3针 SOT-23封装 MOSFET 50V 200mA N-Channel
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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Business

Other Names	BSS138LT1GOSTR	Standard Package	Tape & Reel
Standard Package Name	SOT-23

Compliance

RoHS	Lead free / RoHS Compliant	SVHC	:No SVHC (16-Dec-2013)
EU RoHS	Compliant	Tariff No	85411000
Rad Hardened	No

Electrical

FET Type	MOSFET N-Channel, Metal Oxide	Vgs (Max)	±20 V
FET Feature	Logic Level Gate	Power - Max	225mW
Noise Figure	Not Required dB	Power - Rated	0.225 W
Power - Output	Not Required dB	Delay Time - ON	20ns
Frequency - Max	Not Required MHz	Transistor Type	:N Channel
Delay Time - OFF	20ns	Delay to 1st Tap	20 ns
Number of Elements	1	Vgs(th) (Max) @ Id	1.5V @ 1mA
Voltage - Breakdown	50 V	Voltage - Threshold	:1.5V
Resistance - RDS(On)	:3.5ohm	Rds On (Max) @ Id, Vgs	3500@5V mOhm
Power Dissipation (Max)	0.225 W	Vce(on) (Max) @ Vge, Ic	50 V
Current Drain (Id) - Max	0.2 A	On-State Resistance (Max)	3.5 Ω
Current Transfer Ratio (Max)	100Millimhos	Switch Time (Ton, Toff) (Max)	20(Max) ns
Vce Saturation (Max) @ Ib, Ic	Not Required %	Drain to Source Voltage (Vdss)	50V
Current - Peak Pulse (10/1000us)	0.2 A	Current - Drain (Idss) @ Vds (Vgs=0)	0.2 A
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V	Current - Continuous Drain (Id) @ 25degC	200mA (Ta)

Mechanical

Width	1.3mm	Height	0.94mm
Length	2.9mm	Weight	0.000033
Packaging	Tape and Reel	Lead Style	Gull-wing
Termination	:SMD	Polarization	N-Channel
Mounting Type	Surface Mount	Number of Pins	:3
Package / Case	3SOT-23	Package Cooled	SOT-23
Material Finish	:MSL 1 - Unlimited	Package Quantity	SOT-23
Size / Dimension	2.9 x 1.3 x 0.94mm	Number of Positions	3
Supplier Device Package	SOT-23-3 (TO-236)

Product Info

Type	Power MOSFET	Polarity	N
Channel Type	Enhancement	Card Standard	Power MOSFET
Configuration	Single

Environmental

Operating Temperature

-55 to 150 °C

Operating Temperature - Junction

+150°C

Documents & Media

PDF Document

PDF Document

PDF Document

PDF Document

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