GT30J igbt chip Series

The GT30J series from Toshiba Corporation is a lineup of N-channel IGBT transistors designed for power conversion applications requiring high reliability and efficiency. These devices operate at a nominal voltage of 600V and can handle continuous currents up to 30A, making them suitable for a range of industrial and automotive applications. If you're working on inverters, motor drives, or any system that needs efficient switching and control of power, these IGBTs are a solid choice. One thing worth noting is their TO-3P package, which provides excellent thermal performance and robustness against mechanical stress. This makes them particularly useful in environments where thermal management is critical and the components need to withstand significant physical strain. Engineers tend to reach for this when they need a reliable solution that can handle high power levels and maintain consistent performance over time. The 600V rating also means they can be used in a variety of voltage applications without needing to worry about voltage ratings, further simplifying design considerations

Mfr Part #	Quantity Available	Price	Category	Current - Collector Cutoff (Max)	Mounting Type	Standard Package	Vgs (Max)	Voltage - Input (Min)	Package / Case	Configuration	Operating Temperature	Voltage - Supply	Power Dissipation (Max)	Width	Package Quantity	Channel Type	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Height	Length	Transistor Type	Number of Pins	EU RoHS	Number of Positions	RoHS	Input Type	Power - Max	Switching Energy	Td (on/off) @ 25degC	Vce(on) (Max) @ Vge, Ic	Packaging	Supplier Device Package	Test Condition	Frequency	Voltage - Gate Trigger (Vgt) (Max)	Size / Dimension	Tab Width	Length - Overall	Shell Size - Insert	Printed Circuit Board	Product Category	Factory Pack Quantity	Current - Continuous Drain (Id) @ 25degC	Mounting Style	Energy	Series	Technology	Manufacturer	Standard Package Name	SVHC	Tariff No	Rise Time (Typ)	Rise / Fall Time (Typ)	Weight	Termination	Material Finish	Thermal Resistance	Operating Temperature - Junction	Reverse Recovery Time (trr)	Channels per IC	Input Capacitance (Ciss) (Max) @ Vds	Function	Other Specifications
GT30J322(Q) toshiba	22	1: $38.30	-	30 A	Through Hole	Rail / Tube	±20 V	600 V	3TO-3P(N)IS	Single	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GT30J311 toshiba	0		-	30 A	Surface Mount	Rail / Tube	±20 V	600 V	3TO-3P(SM)	Single	150	-	145000	13.5	TO-3P(SM)	N	-	-	-	-	-	-	Not Compliant	3	-	-	-	-	-	-	-	-	-	-	-	-	Tab	15.9(Max)	5(Max)	2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 GT30J121(Q) toshiba	100	100: $12.0952	-	30 A	Through Hole	Bulk	±20 V	600 V	3TO-3PN	Single	- 55 C	600V	-	4.8 mm	-	-	30A	60A	19 mm	15.9 mm	-	-	-	-	Lead free / RoHS Compliant	Standard	170W	1mJ (on), 800µJ (off)	90ns/300ns	2.45V @ 15V, 30A	Tube	TO-3P(N)	300V, 30A, 24 Ohm	-	-	-	-	-	-	-	IGBT Transistors	50	30 A	Through Hole	1mJ (on), 800µJ (off)	GT30J121	Si	Toshiba	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GT30J101 toshiba	189	1: $25.9556	-	30 A	Through Hole	Rail / Tube	±20 V	600 V	3TO-3PN	Single	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 GT30J324 toshiba	2402	1: $55.08	-	30 A	Through Hole	Rail / Tube	±20 V	600 V	3TO-3PN	Single	:-55°C	:2.45V	:170W	-	TO-3PN	N	:30A	:60A	-	-	:IGBT	:3	Not Compliant	3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	TO-3PN	:No SVHC (20-Jun-2013)	85412900	:70ns	:50ns	0.0046	:Through Hole	:-	:0.735°C/W	:150°C	-	-	-	-	-
GT30J324(Q) toshiba	58	50: $54.50	-	30 A	Through Hole	Bulk, Rail / Tube	±20 V	600 V	3TO-3PN	Single	-	600V	-	-	-	-	30A	60A	-	-	-	-	-	-	Lead free / RoHS Compliant	Standard	170W	1mJ (on), 800µJ (off)	90ns/300ns	2.45V @ 15V, 30A	Tube	TO-3P(N)	300V, 30A, 24 Ohm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	60ns	-	-	-	-
GT30J322 toshiba	0		-	30 A	Through Hole	Rail / Tube	±20 V	600 V	3TO-3P(N)IS	Single	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GT30J301 toshiba	0		-	30 A	Through Hole	Rail / Tube	±20 V	600 V	3TO-3PN	Single	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GT30J121 toshiba	132	50: $32.421	-	30 A	Through Hole	Rail / Tube	±20 V	600 V	3TO-3PN	Single	+150 °C	600 V	170 W	4.8mm	TO-3P	N	-	-	20mm	15.9mm	单	3	-	-	-	-	-	-	-	-	-	-	-	1MHz	±20V	15.9 x 4.8 x 20mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	单	-	-	-
GT30J101(Q) Toshiba	80	5: $97.9812	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GT30J301(Q) Toshiba	76	5: $121.4072	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GT30J341,Q(O Toshiba	11	1: $26.46	-	59 A	通孔	-	-	-	-	-	+175 °C	600 V	230 W	4.5mm	TO-3PN	N	-	-	20mm	15.5mm	单	3	-	-	-	-	-	-	-	-	-	-	-	0.4µs	±25V	15.5 x 4.5 x 20mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2900pF	Y	0.8mJ

cigen-GT30J

Series Images (7)

Documents & Media

Frequently Asked Questions

GT30J igbt chip - Part List

Operating Temperature

Power Dissipation (Max)

Width

Standard Package

Mounting Type

Package / Case

Package Quantity

Voltage - Supply

Length

Current - Collector Cutoff (Max)

Current - Collector (Ic) (Max)

Current - Collector Pulsed (Icm)

Height

Transistor Type

Number of Pins

Frequency

Voltage - Gate Trigger (Vgt) (Max)

Size / Dimension