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GT30J341,Q(O

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GT30J341,Q(O

Manufacturer
Description
Toshiba , N沟道 IGBT, 59 A, Vce=600 V, 0.4μs, 3针 TO-3P封装
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Electrical

Frequency0.4µsTransistor Type单
Voltage - Supply600 VPower Dissipation (Max)230 W
Current - Collector Cutoff (Max)59 AVoltage - Gate Trigger (Vgt) (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2900pF

Mechanical

Width4.5mmHeight20mm
Length15.5mmMounting Type通孔
Number of Pins3Package QuantityTO-3PN
Size / Dimension15.5 x 4.5 x 20mm

Product Info

FunctionYChannel TypeN
Other Specifications0.8mJ

Environmental

Operating Temperature+175 °C