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toshiba- MOSFET Modules

Toshiba Corporation is a Japanese multinational conglomerate headquartered in Minato, Tokyo, founded in 1939 through the merger of Shibaura Seisakusho and Tokyo Denki, with roots dating back to 1875. Its core business areas include semiconductors, storage solutions, infrastructure systems, and digital solutions. In semiconductors, Toshiba offers a broad portfolio of discrete devices, optoelectronics, analog ICs, and microcontrollers. Key product series include the TLP photocoupler family for optoelectronics, power MOSFETs such as the SSM and DT series, and IGBT modules like the MG series. The company also provides the TXZ family of ARM-based microcontrollers for embedded applications and motor driver ICs for industrial and automotive markets. Toshiba has been consistently ranked as the world's number one supplier of optoelectronics and discrete components since 1986. Its technological advantages include proprietary semiconductor processes and a strong focus on high-efficiency power devices, including silicon carbide (SiC) technology. The company's electronic devices and storage division drives innovation in IoT, automotive, and data center applications. Toshiba's legacy in quality

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MOSFET Modules - 型号列表

87 parts in total

Input Capacitance (Ciss) (Max) @ Vds

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

Current - Continuous Drain (Id) @ 25degC

Drain to Source Voltage (Vdss)

Supplier Device Package

Power Dissipation (Max)

Package / Case

Series

Drive Voltage (Max Rds On, Min Rds On)

Base Product Number

Operating Temperature

Vgs (Max)

Power - Max

Packaging

FET Type

Configuration

Standard Package

Mounting Type

FET Feature

Technology

Manufacturer

Mfr Part #Quantity AvailablePricePackagingMounting TypePackage / CaseSupplier Device PackageOperating TemperatureFET FeatureVgs(th) (Max) @ IdRds On (Max) @ Id, VgsDrain to Source Voltage (Vdss)Input Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25degCSeriesTechnologyPart StatusGate Charge (Qg) (Max) @ VgsQualificationGradeFET TypeVgs (Max)Power Dissipation (Max)Drive Voltage (Max Rds On, Min Rds On)MfrBase Product NumberPower - MaxManufacturerConfigurationStandard PackageRoHSProduct CategoryOutput TypeCurrent - OutputNumber of OutputsFrequency - SwitchingSynchronous RectifierVoltage - Input (Min)TypeOther NamesFactory Pack QuantityFall TimeGate ChargePower - RatedRise Time (Typ)Transistor TypeDelay to 1st TapNumber of ChannelsPower - Average ForwardVce(on) (Max) @ Vge, IcOn-State Resistance (Max)Switch Time (Ton, Toff) (Max)Voltage - Gate Trigger (Vgt) (Max)Current - Drain (Idss) @ Vds (Vgs=0)HeightLengthMounting StyleChannel Type
TB7106F(T2LPP1,Q)
103000: $5.0932Tape & Reel (TR)Surface Mount8-PowerVDFN8-SOP Advance-40°C ~ 125°C---------------------3,000RoHS CompliantVoltage Regulators - Switching RegulatorsAdjustable3A1380kHzYes0.8 V ~ 18 VStep-Down (Buck)-------------------
TK5A60W,S4VX
2
1171: $14.28TubeThrough HoleTO-220-3 Full PackTO-220SIS- 55 CSuper Junction3.7V @ 270µA900 mOhm @ 2.7A, 10V600V380pF @ 300V5.4A (Ta)TK5A60WSi-10.5nC @ 10V--MOSFET N-Channel, Metal Oxide30 V----30WToshibaSingle50RoHS Compliant--------TK5A60WS4VX507 ns10.5 nC30 W18 nsN-Channel50 ns1 Channel30 W600 V770 mOhms40 ns30 V5.4 A15 mm10 mmThrough HoleEnhancement
SSM6K809R,LXHF
SSM6K809R,LXHF

Toshiba Corporation

22923000: $1.9481Tape & Reel (TR)Surface Mount6-SMD, Flat Leads6-TSOP-F175°C-2.5V @ 100µA36mOhm @ 5A, 10V60 V550 pF @ 10 V6A (Ta)-MOSFET (Metal Oxide)Active9.3 nC @ 10 VAEC-Q101AutomotiveN-Channel±20V1.5W (Ta)4V, 10VToshiba Semiconductor and StorageSSM6K809--------------------------------
SSM6K810R,LXHF
SSM6K810R,LXHF

Toshiba Corporation

46153000: $1.9481Tape & Reel (TR)Surface Mount6-SMD, Flat Leads6-TSOP-F175°C-2.5V @ 100µA69mOhm @ 2A, 10V100 V430 pF @ 15 V3.5A (Ta)-MOSFET (Metal Oxide)Active3.2 nC @ 4.5 VAEC-Q101AutomotiveN-Channel±20V1.5W (Ta)4.5V, 10VToshiba Semiconductor and StorageSSM6K810--------------------------------
SSM6N813R,LXHF
SSM6N813R,LXHF

Toshiba Corporation

131: $3.3488Tape & Reel (TR)Surface Mount6-SMD, Flat Leads6-TSOP-F175°CLogic Level Gate, 4.5V Drive2.5V @ 100µA112mOhm @ 3.5A, 10V100V242pF @ 15V3.5A (Ta)-MOSFET (Metal Oxide)Active3.6nC @ 4.5VAEC-Q101Automotive-----SSM6N8131.5W (Ta)Toshiba Semiconductor and Storage2 N-Channel (Dual)-----------------------------
TK090Z65Z,S1F
TK090Z65Z,S1F

Toshiba Corporation

-TubeThrough HoleTO-247-4TO-247-4L(T)150°C-4V @ 1.27mA90mOhm @ 15A, 10V650 V2780 pF @ 300 V30A (Ta)DTMOSVIMOSFET (Metal Oxide)Active47 nC @ 10 V--N-Channel±30V230W (Tc)10VToshiba Semiconductor and Storage---------------------------------
SSM5N16FU,LF
SSM5N16FU,LF

Toshiba Corporation

-Tape & Reel (TR), Cut Tape (CT), Digi-Reel®Surface Mount5-TSSOP, SC-70-5, SOT-353USV150°C-1.1V @ 100µA3Ohm @ 10mA, 4V20V9.3pF @ 3V100mA (Ta)-MOSFET (Metal Oxide)Active--------SSM5N16200mW (Ta)Toshiba Semiconductor and Storage2 N-Channel (Dual)-----------------------------
SSM3K16FS,LF
SSM3K16FS,LF

Toshiba Corporation

-Tape & Reel (TR), Cut Tape (CT), Digi-Reel®Surface MountSC-75, SOT-416SSM150°C-1.1V @ 100µA3Ohm @ 10mA, 4V20 V9.3 pF @ 3 V100mA (Ta)-MOSFET (Metal Oxide)Active---N-Channel±10V100mW (Ta)1.5V, 4VToshiba Semiconductor and Storage---------------------------------
TK065Z65Z,S1F
TK065Z65Z,S1F

Toshiba Corporation

251: $79.764TubeThrough HoleTO-247-4TO-247-4L(T)150°C-4V @ 1.69mA65mOhm @ 19A, 10V650 V3650 pF @ 300 V38A (Ta)DTMOSVIMOSFET (Metal Oxide)Active62 nC @ 10 V--N-Channel±30V270W (Tc)10VToshiba Semiconductor and Storage---------------------------------
TK3A90E,S4X
TK3A90E,S4X

Toshiba Corporation

-TubeThrough HoleTO-220-3 Full PackTO-220SIS150°C-4V @ 250µA4.6Ohm @ 1.3A, 10V900 V650 pF @ 25 V2.5A (Ta)-MOSFET (Metal Oxide)Active15 nC @ 10 V--N-Channel±30V35W (Tc)10VToshiba Semiconductor and Storage---------------------------------
SSM3K72KFS,LXHF
SSM3K72KFS,LXHF

Toshiba Corporation

-Tape & Reel (TR), Cut Tape (CT), Digi-Reel®Surface MountSC-75, SOT-416SSM150°C-2.1V @ 250µA1.5Ohm @ 100mA, 10V60 V40 pF @ 10 V300mA (Ta)U-MOSVII-HMOSFET (Metal Oxide)Active0.6 nC @ 4.5 VAEC-Q101AutomotiveN-Channel±20V150mW (Ta)4.5V, 10VToshiba Semiconductor and Storage---------------------------------
SSM6K809R,LF
SSM6K809R,LF

Toshiba Corporation

30983000: $1.4517Tape & Reel (TR), Cut Tape (CT), Digi-Reel®Surface Mount6-SMD, Flat Leads6-TSOP-F175°C-2.5V @ 100µA36mOhm @ 5A, 10V60 V550 pF @ 10 V6A (Ta)U-MOSVIII-HMOSFET (Metal Oxide)Active9.3 nC @ 10 V--N-Channel±20V1.5W (Ta)4V, 10VToshiba Semiconductor and StorageSSM6K809--------------------------------
TPCP8407,LF
TPCP8407,LF

Toshiba Corporation

24301: $8.16Tape & Reel (TR), Cut Tape (CT), Digi-Reel®Surface Mount8-SMD, Flat LeadsPS-8150°C-3V @ 1mA36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V40V505pF @ 10V, 810pF @ 10V5A (Ta), 4A (Ta)-MOSFET (Metal Oxide)Active11.8nC @ 10V, 18nC @ 10VAEC-Q101Automotive-----TPCP8407690mW (Ta)Toshiba Semiconductor and StorageN and P-Channel-----------------------------
TK4P60D,RQ
TK4P60D,RQ

Toshiba Corporation

-Tape & Reel (TR), Cut Tape (CT), Digi-Reel®Surface MountTO-252-3, DPAK (2 Leads + Tab), SC-63DPAK150°C-4.4V @ 1mA1.7Ohm @ 2A, 10V600 V600 pF @ 25 V4A (Ta)-MOSFET (Metal Oxide)Active12 nC @ 10 V--N-Channel±30V100W (Tc)10VToshiba Semiconductor and Storage---------------------------------
TK12A50W,S5X
TK12A50W,S5X

Toshiba Corporation

101: $25.676TubeThrough HoleTO-220-3 Full PackTO-220SIS150°C-3.7V @ 600µA300mOhm @ 5.8A, 10V500 V890 pF @ 300 V11.5A (Ta)DTMOSIVMOSFET (Metal Oxide)Active25 nC @ 10 V--N-Channel±30V35W (Tc)10VToshiba Semiconductor and Storage---------------------------------
TPN1200APL,L1Q
TPN1200APL,L1Q

Toshiba Corporation

141: $11.2132Tape & Reel (TR), Cut Tape (CT), Digi-Reel®Surface Mount8-PowerVDFN8-TSON Advance (3.1x3.1)175°C-2.5V @ 300µA11.5mOhm @ 20A, 10V100 V1855 pF @ 50 V40A (Tc)U-MOSIX-HMOSFET (Metal Oxide)Active24 nC @ 10 V--N-Channel±20V630mW (Ta), 104W (Tc)4.5V, 10VToshiba Semiconductor and Storage---------------------------------
TPH9R00CQH,LQ
TPH9R00CQH,LQ

Toshiba Corporation

101: $37.5727Tape & Reel (TR), Cut Tape (CT), Digi-Reel®Surface Mount8-PowerVDFN8-SOP Advance (5x5)175°C-4.3V @ 1mA9mOhm @ 32A, 10V150 V5400 pF @ 75 V64A (Tc)-MOSFET (Metal Oxide)Active44 nC @ 10 V--N-Channel±20V960mW (Ta), 210W (Tc)8V, 10VToshiba Semiconductor and Storage---------------------------------
TPW2R508NH,L1Q
TPW2R508NH,L1Q

Toshiba Corporation

-Tape & Reel (TR), Cut Tape (CT), Digi-Reel®Surface Mount8-PowerVDFN8-DSOP Advance150°C-4V @ 1mA2.5mOhm @ 50A, 10V75 V6000 pF @ 37.5 V150A (Ta)U-MOSVIII-HMOSFET (Metal Oxide)Active72 nC @ 10 V--N-Channel±20V800mW (Ta), 142W (Tc)10VToshiba Semiconductor and Storage---------------------------------
TK155E65Z,S1X
TK155E65Z,S1X

Toshiba Corporation

3441: $31.688TubeThrough HoleTO-220-3TO-220150°C-4V @ 730µA155mOhm @ 9A, 10V650 V1635 pF @ 300 V18A (Ta)-MOSFET (Metal Oxide)Active29 nC @ 10 V--N-Channel±30V150W (Tc)10VToshiba Semiconductor and Storage---------------------------------
SSM3J15CT,L3F
SSM3J15CT,L3F

Toshiba Corporation

4905: $1.87Tape & Reel (TR), Cut Tape (CT), Digi-Reel®Surface MountSC-101, SOT-883CST3150°C-1.7V @ 100µA12Ohm @ 10mA, 4V30 V9.1 pF @ 3 V100mA (Ta)-MOSFET (Metal Oxide)Active---P-Channel±20V100mW (Ta)2.5V, 4VToshiba Semiconductor and Storage---------------------------------
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