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TK5A60W,S4VX

Manufacturer	Toshiba Corporation
Description	DTMOSIV_600V_900MOHM MAX(VGS=1 MOSFET N CH 600V 5.4A TO-220SIS MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC TK5A60W,S4VX MOSFET N-Ch 9.7A 100W FET 600V 380pF 20nC
Category	Discrete Semiconductor ComponentsHigh-Power Discrete Semiconductor ModulesMOSFET Modules

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Other Names	TK5A60WS4VX	Standard Package	50
Factory Pack Quantity	50

RoHS

RoHS Compliant

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	7 ns
Vgs (Max)	30 V	FET Feature	Super Junction
Gate Charge	10.5 nC	Power - Max	30W
Power - Rated	30 W	Rise Time (Typ)	18 ns
Transistor Type	N-Channel	Delay to 1st Tap	50 ns
Number of Channels	1 Channel	Vgs(th) (Max) @ Id	3.7V @ 270µA
Rds On (Max) @ Id, Vgs	900 mOhm @ 2.7A, 10V	Power - Average Forward	30 W
Vce(on) (Max) @ Vge, Ic	600 V	On-State Resistance (Max)	770 mOhms
Gate Charge (Qg) (Max) @ Vgs	10.5nC @ 10V	Switch Time (Ton, Toff) (Max)	40 ns
Drain to Source Voltage (Vdss)	600V	Voltage - Gate Trigger (Vgt) (Max)	30 V
Current - Drain (Idss) @ Vds (Vgs=0)	5.4 A	Input Capacitance (Ciss) (Max) @ Vds	380pF @ 300V
Current - Continuous Drain (Id) @ 25degC	5.4A (Ta)

Operating Temperature

- 55 C

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