ONEIC.US
  1. Home
  2. Manufacturer
  3. microchip
  4. Discrete Semiconductors

microchip

microchip- Discrete Semiconductors

Microchip Technology Inc. is a global semiconductor company founded in 1989 and headquartered in Chandler, Arizona, USA. It is a leading provider of microcontroller, mixed-signal, analog, and Flash-IP solutions. The company's extensive product portfolio includes 8-bit, 16-bit, and 32-bit microcontrollers (MCUs) under the PIC, AVR, and SAM families, as well as dsPIC digital signal controllers. Key MCU product lines are the PIC10/PIC12/PIC16/PIC18 series for 8-bit, AVR for 8-bit and 32-bit, SAM ARM Cortex-M based MCUs, and the PIC32 family. In addition, Microchip offers a broad range of analog, power management, linear, mixed-signal, thermal management, and RF products. The company has expanded into FPGAs with the PolarFire family, enhancing its total system solution capability. Microchip holds a dominant position in the 8-bit MCU market and is consistently ranked among the top global MCU suppliers. Its products are used in a wide variety of applications including automotive, industrial, consumer, aerospace, defense, and IoT. Known for low risk development, lower total system cost, and fast time to market, Microchip provides outstanding technical support and reliable delivery. The co

03

Discrete Semiconductors - 型号列表

82 parts in total

Current - Continuous Drain (Id) @ 25degC

Rds On (Max) @ Id, Vgs

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Power - Max

Package / Case

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

RoHS

Power - Average Forward

Operating Temperature

Standard Package

Factory Pack Quantity

Transistor Type

Vce(on) (Max) @ Vge, Ic

Standard Package Name

Vgs (Max)

Mounting Type

Package Quantity

Channel Type

On-State Resistance (Max)

FET Type

FET Feature

Packaging

Supplier Device Package

Mfr Part #Quantity AvailablePriceRoHSManufacturerPackage / CaseStandard PackageMounting TypeVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25degCDrain to Source Voltage (Vdss)FET TypeFET FeaturePower - MaxRds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPackagingSupplier Device PackageTechnologyConfigurationOperating TemperatureMounting StyleVgs (Max)Channel TypeFactory Pack QuantityTransistor TypePower - Average ForwardVce(on) (Max) @ Vge, IcSeriesStandard Package NameEU RoHSVoltage - BreakdownPackage QuantityNumber of PositionsOn-State Resistance (Max)Rad HardenedPackage CooledOperating Temperature - JunctionPower Dissipation (Max)Current Transfer Ratio (Min)Lead StyleFall TimeGate ChargeRise Time (Typ)Delay to 1st TapSwitch Time (Ton, Toff) (Max)HeightLength
2N3823
2N3823

Microchip Technology Inc.

351: $294.576NoMicrosemiTO-72-4--30 V20 mA----------Single- 55 C to + 200 CThrough Hole--100N-Channel300 mW30 V--------------------
2N3821
2N3821

Microchip Technology Inc.

101: $440.7481NoMicrosemiTO-72----------------Through Hole--------------------------
2N5114
2N5114

Microchip Technology Inc.

10100: $282.011NoMicrosemi--------------------------------------------
2N5115
2N5115

Microchip Technology Inc.

10100: $282.3251NoMicrosemi--------------------------------------------
2N3822
2N3822

Microchip Technology Inc.

10100: $166.736NoMicrosemiTO-72----------------Through Hole--------------------------
2N5114UB
2N5114UB

Microchip Technology Inc.

10100: $366.046NoMicrosemi3UBDIESurface Mount30-30 V---------Single-65 to 200 °C-30 VP-----SMDNot Compliant30UB3-NoUB200C----------
2N5115UB
2N5115UB

Microchip Technology Inc.

10100: $413.7487NoMicrosemi3UBDIESurface Mount------------Single-65 to 200 °C-30 VP------------------------
2N5116UB
2N5116UB

Microchip Technology Inc.

10100: $349.3167NoMicrosemi3UBDIESurface Mount------------Single-65 to 200 °C-30 VP------------------------
2N4858
2N4858

Microchip Technology Inc.

101: $375.5429NoMicrosemi--------------------------------------------
2N5116
2N5116

Microchip Technology Inc.

10100: $238.0694NoMicrosemi3TO-18BulkThrough Hole30 V- 500 pA----------Single-65 to 200 °CThrough Hole30 VP100P-Channel500 mW30 V-TO-206-AANot Compliant30TO-183175 Ohms---5004 VThrough Hole-------
APT94N65B2C6
2
APT94N65B2C6

Microchip Technology Inc.

-Lead free / RoHS CompliantMicrosemiTO-247-3 Variant1Through Hole3.5V @ 3.5mA95A (Tc)650VMOSFET N-Channel, Metal OxideSuper Junction833W35 mOhm @ 35.2A, 10V320nC @ 10V8140pF @ 25VBulkT-MAX™ [B2]SiSingle+ 150 CThrough Hole20 VEnhancement1N-Channel833 W650 V*-----35 mOhms------172 ns320 nC59 ns323 ns26 ns21.46 mm16.26 mm
APT20F50S
APT20F50S

Microchip Technology Inc.

-Lead free / RoHS CompliantMicrosemiTO-268-3, D³Pak (2 Leads + Tab), TO-268AA1Surface Mount5V @ 500µA20A500VMOSFET N-Channel, FREDFETStandard290W300 mOhm @ 10A, 10V75nC @ 10V2950pF @ 25VTubeD3PakSi-----------------------------
APT15F60S
APT15F60S

Microchip Technology Inc.

-Lead free / RoHS CompliantMicrosemiTO-268-3, D³Pak (2 Leads + Tab), TO-268AA1Surface Mount5V @ 500µA16A600VMOSFET N-Channel, FREDFETStandard290W430 mOhm @ 7A, 10V72nC @ 10V2882pF @ 25VTubeD3PakSi-----------------------------
APT18F60S
APT18F60S

Microchip Technology Inc.

-Lead free / RoHS CompliantMicrosemiTO-268-3, D³Pak (2 Leads + Tab), TO-268AA1Surface Mount5V @ 1mA19A600VMOSFET N-Channel, FREDFETStandard335W370 mOhm @ 9A, 10V90nC @ 10V3550pF @ 25VTubeD3PakSi-----------------------------
APT11F80S
APT11F80S

Microchip Technology Inc.

-Lead free / RoHS CompliantMicrosemiTO-268-3, D³Pak (2 Leads + Tab), TO-268AA1Surface Mount5V @ 1mA12A800VMOSFET N-Channel, FREDFETStandard337W900 mOhm @ 6A, 10V80nC @ 10V2471pF @ 25VTubeD3PakSi-----------------------------
APT23F60S
APT23F60S

Microchip Technology Inc.

-Lead free / RoHS CompliantMicrosemiTO-268-3, D³Pak (2 Leads + Tab), TO-268AA1Surface Mount5V @ 1mA24A600VMOSFET N-Channel, FREDFETStandard415W290 mOhm @ 11A, 10V110nC @ 10V4415pF @ 25VTubeD3PakSi-----------------------------
APT9F100S
APT9F100S

Microchip Technology Inc.

-Lead free / RoHS CompliantMicrosemiTO-268-3, D³Pak (2 Leads + Tab), TO-268AA1Surface Mount5V @ 1mA9A1000V (1kV)MOSFET N-Channel, FREDFETStandard337W1.6 Ohm @ 5A, 10V80nC @ 10V2606pF @ 25VTubeD3PakSi-----------------------------
APT38N60SC6
APT38N60SC6

Microchip Technology Inc.

-Contains lead / RoHS non-compliantMicrosemiTO-263-3, D²Pak (2 Leads + Tab), TO-263AB1Surface Mount3.5V @ 1.2mA38A (Tc)600VMOSFET N-Channel, Metal OxideStandard278W99 mOhm @ 18A, 10V112nC @ 10V2826pF @ 25VBulkD3PakSi---------*-------------------
APT18M80S
APT18M80S

Microchip Technology Inc.

-Lead free / RoHS CompliantMicrosemiTO-263-3, D²Pak (2 Leads + Tab), TO-263AB1Surface Mount5V @ 1mA19A (Tc)800VMOSFET N-Channel, Metal OxideStandard500W530 mOhm @ 9A, 10V120nC @ 10V3760pF @ 25VBulkD3PakSi---------*-------------------
APT28F60S
APT28F60S

Microchip Technology Inc.

-Lead free / RoHS CompliantMicrosemiTO-268-3, D³Pak (2 Leads + Tab), TO-268AA1Surface Mount5V @ 1mA30A600VMOSFET N-Channel, FREDFETStandard520W220 mOhm @ 14A, 10V140nC @ 10V5575pF @ 25VTubeD3PakSi-----------------------------
Page 1 / 5
1