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APT94N65B2C6
| Manufacturer | |
| Description | MOSFET N-CH 650V 95A T-MAX MOSFET Power MOSFET - CoolMOS |
| Category |
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Business
| Standard Package | 1 | Factory Pack Quantity | 1 |
Compliance
| RoHS | Lead free / RoHS Compliant | ||
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Fall Time | 172 ns |
| Vgs (Max) | 20 V | FET Feature | Super Junction |
| Gate Charge | 320 nC | Power - Max | 833W |
| Rise Time (Typ) | 59 ns | Transistor Type | N-Channel |
| Delay to 1st Tap | 323 ns | Vgs(th) (Max) @ Id | 3.5V @ 3.5mA |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 35.2A, 10V | Power - Average Forward | 833 W |
| Vce(on) (Max) @ Vge, Ic | 650 V | On-State Resistance (Max) | 35 mOhms |
| Gate Charge (Qg) (Max) @ Vgs | 320nC @ 10V | Switch Time (Ton, Toff) (Max) | 26 ns |
| Drain to Source Voltage (Vdss) | 650V | Input Capacitance (Ciss) (Max) @ Vds | 8140pF @ 25V |
| Current - Continuous Drain (Id) @ 25degC | 95A (Tc) | ||
Mechanical
| Height | 21.46 mm | Length | 16.26 mm |
| Packaging | Bulk | Mounting Type | Through Hole |
| Mounting Style | Through Hole | Package / Case | TO-247-3 Variant |
| Supplier Device Package | T-MAX™ [B2] | ||
Product Info
| Series | * | Technology | Si |
| Channel Type | Enhancement | Manufacturer | Microsemi |
| Configuration | Single | ||
Environmental
| Operating Temperature | + 150 C | ||