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CAS120M12BM2
| Manufacturer | |
| Description | Wolfspeed , 双 N沟道 MOSFET, 193 A, Vds=1200 V, 7针 Discrete Semiconductor Modules 1200V, 120A, SiC Half Bridge Module |
| Category |
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Business
| Product | Power Semiconductor Modules | Factory Pack Quantity | 1 |
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Delay Time - ON | 38 ns | Output Function | 增强 |
| Transistor Type | SiC | Delay Time - OFF | 70 ns |
| Voltage - Supply | 2.4V | Number of Elements | 2 |
| Resistance - Input | 0.03 Ω | Vgs(th) (Max) @ Id | 1.8V |
| Power Dissipation (Max) | 925 W | Vce(on) (Max) @ Vge, Ic | 1.2 kV |
| On-State Resistance (Max) | 13 mOhms | Current Transfer Ratio (Min) | 53.8s |
| Gate Charge (Qg) (Max) @ Vgs | -10 V，25 V | Input Capacitance (Ciss) (Max) @ Vds | 6.3 nF @ 1 kV |
| Current - Continuous Drain (Id) @ 25degC | 193 A | ||
Mechanical
| Width | 61.4mm | Height | 30mm |
| Length | 106.4mm | Packaging | Bulk |
| Mounting Type | 面板安装 | Mounting Style | Screw |
| Number of Pins | 7 | Package / Case | Module |
| Size / Dimension | 106.4 x 61.4 x 30mm | ||
Product Info
| Type | H-Bridge MOSFET Module | Channel Type | N |
| Manufacturer | Wolfspeed / Cree | Card Standard | 功率 MOSFET |
| Configuration | Half-Bridge | ||
Environmental
| Operating Temperature | +150 °C | ||