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C3M0280090D
| Manufacturer | |
| Description | Wolfspeed N沟道 SiC MOSFET , 11.5 A, Vds=900 V, 3针 TO-247封装 MOSFET G3 SiC MOSFET 900V, 280mOhm |
| Category |
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Business
| Product | Power MOSFET | Factory Pack Quantity | 30 |
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Fall Time | 7.5 ns | Gate Charge | 9.5 nC |
| Delay Time - ON | 26 ns | Output Function | 增强 |
| Rise Time (Typ) | 10 ns | Transistor Type | SiC |
| Delay Time - OFF | 17.5 ns | Delay to 1st Tap | 17.5 ns |
| Voltage - Supply | 4.8V | Number of Channels | 1 Channel |
| Number of Elements | 1 | Resistance - Input | 0.36 Ω |
| Vgs(th) (Max) @ Id | 3.5V | Power - Average Forward | 54 W |
| Power Dissipation (Max) | 54 W | Vce(on) (Max) @ Vge, Ic | 900 V |
| On-State Resistance (Max) | 280 mOhms | Current Transfer Ratio (Min) | 3.6s |
| Gate Charge (Qg) (Max) @ Vgs | -8 V，18 V | Switch Time (Ton, Toff) (Max) | 26 ns |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 600 V | Current - Continuous Drain (Id) @ 25degC | 11.5 A |
Mechanical
| Width | 21.1mm | Height | 5.21mm |
| Length | 16.13mm | Packaging | Tube |
| Mounting Type | 通孔 | Mounting Style | Through Hole |
| Number of Pins | 3 | Package / Case | TO-247-3 |
| Package Quantity | TO-247 | Size / Dimension | 16.13 x 21.1 x 5.21mm |
Product Info
| Type | Silicon Carbide MOSFET | Function | Y |
| Technology | SiC | Channel Type | N |
| Manufacturer | Wolfspeed / Cree | Card Standard | 功率 MOSFET |
| Configuration | Single | ||
Environmental
| Operating Temperature | +150 °C | ||