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C3M0065090D

Manufacturer	Wolfspeed, Inc.
Description	Wolfspeed , N沟道 MOSFET, 36 A, Vds=900 V, 3针 TO-247封装 Wolfspeed N沟道 SiC MOSFET , 36 A, Vds=900 V, 3针 TO-247封装 MOSFET G3 SiC MOSFET 900V, 65mOhm
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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Business

Product

Power MOSFET

Factory Pack Quantity

RoHS

RoHS Compliant

Fall Time	25 ns	Vgs (Max)	- 8 V, + 18 V
Gate Charge	30.4 nC	Delay Time - ON	21 ns
Output Function	增强	Rise Time (Typ)	36 ns
Transistor Type	SiC	Delay Time - OFF	28 ns
Delay to 1st Tap	28 ns	Voltage - Supply	4.8V
Number of Channels	1 Channel	Number of Elements	1
Resistance - Input	0.078 Ω	Vgs(th) (Max) @ Id	2.1V
Power - Average Forward	125 W	Power Dissipation (Max)	125 W
Vce(on) (Max) @ Vge, Ic	900 V	On-State Resistance (Max)	90 mOhms
Current Transfer Ratio (Min)	13.6S	Gate Charge (Qg) (Max) @ Vgs	18 V
Switch Time (Ton, Toff) (Max)	21 ns	Input Capacitance (Ciss) (Max) @ Vds	660 pF @ 600 V
Current - Continuous Drain (Id) @ 25degC	36 A

Operating Temperature

+150 °C