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C2M0280120D

Manufacturer	Wolfspeed, Inc.
Description	Wolfspeed , N沟道 MOSFET, 10 A, Vds=1200 V, 3针 TO-247封装 Wolfspeed N沟道 SiC MOSFET , 10 A, Vds=1200 V, 3针 TO-247封装 MOSFET SIC MOSFET 1200V RDS ON 280 mOhm
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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Business

Tradename

Z-FET

Factory Pack Quantity

RoHS

RoHS Compliant

Fall Time	9.9 ns	Vgs (Max)	- 10 V to + 25 V
Gate Charge	5.6 nC	Delay Time - ON	5.2 ns
Output Function	增强	Rise Time (Typ)	7.6 ns
Transistor Type	SiC	Delay Time - OFF	10.8 ns
Delay to 1st Tap	10.8 ns	Voltage - Supply	3.3V
Number of Channels	1 Channel	Number of Elements	1
Resistance - Input	0.37 Ω	Vgs(th) (Max) @ Id	4V
Power - Average Forward	62.5 W	Power Dissipation (Max)	62.5 W
Vce(on) (Max) @ Vge, Ic	1200 V	On-State Resistance (Max)	280 mOhms
Current Transfer Ratio (Min)	2.8S	Gate Charge (Qg) (Max) @ Vgs	25 V
Switch Time (Ton, Toff) (Max)	5.2 ns	Input Capacitance (Ciss) (Max) @ Vds	259 pF @ 1000 V
Current - Continuous Drain (Id) @ 25degC	10 A

Operating Temperature

+150 °C