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C3M0120090J
| Manufacturer | |
| Description | MOSFET G3 SiC MOSFET 900V, 120 mOhm |
| Category |
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Business
| Product | Power MOSFET | Factory Pack Quantity | 50 |
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Fall Time | 5 ns | Vgs (Max) | - 8 V, + 18 V |
| Gate Charge | 17.3 nC | Rise Time (Typ) | 9 ns |
| Transistor Type | N-Channel | Delay to 1st Tap | 15 ns |
| Number of Channels | 1 Channel | Vgs(th) (Max) @ Id | 1.8 V |
| Power - Average Forward | 83 W | Vce(on) (Max) @ Vge, Ic | 900 V |
| On-State Resistance (Max) | 170 mOhms | Current Transfer Ratio (Min) | 6.7 S |
| Switch Time (Ton, Toff) (Max) | 12.5 ns | Current - Continuous Drain (Id) @ 25degC | 22 A |
Mechanical
| Packaging | Tube | Mounting Style | SMD/SMT |
| Package / Case | TO-263-7 | ||
Product Info
| Type | Silicon Carbide MOSFET | Technology | SiC |
| Channel Type | Enhancement | Manufacturer | Wolfspeed / Cree |
| Configuration | Single | ||
Environmental
| Operating Temperature | + 150 C | ||