WNSC08650T6J
| Manufacturer | |
| Description | DIODE SIL CARBIDE 650V 8A 5DFN |
| Category |
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Compliance
| Part Status | Obsolete | ||
Electrical
| Speed | Zero Recovery Time > 500mA (Io) | Current - Test | 50 µA @ 650 V |
| Capacitance @ Vr, F | 267pF @ 1V, 1MHz | Voltage - Input (Min) | 1.7 V @ 8 A |
| Reverse Recovery Time (trr) | 0 ns | Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 8A | ||
Mechanical
| Packaging | Tape & Reel (TR) | Mounting Type | Surface Mount |
| Package / Case | 4-VSFN Exposed Pad | Supplier Device Package | 5-DFN (8x8) |
Product Info
| Mfr | WeEn Semiconductors | Series | - |
| Technology | SiC (Silicon Carbide) Schottky | Base Product Number | WNSC0 |
Environmental
| Operating Temperature - Junction | 175°C (Max) | ||