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SIHD7N60E-E3
| Manufacturer | |
| Description | MOSFET N CH 600V 7A TO-252 MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS MOSFET N-CH 600V 7A TO-252 |
| Category |
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Business
| MOQ | 3000 | Tradename | TrenchFET |
| Unit Pack | 3000 | Part # Aliases | SIHD7N60E |
| Product Category | MOSFET | Standard Package | 3,000 |
| Factory Pack Quantity | 3000 | ||
Compliance
| RoHS | Lead free / RoHS Compliant | ||
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | FET Feature | Standard |
| Power - Max | 78W | Transistor Type | N-Channel |
| Vgs(th) (Max) @ Id | 4V @ 250µA | Rds On (Max) @ Id, Vgs | 600 mOhm @ 3.5A, 10V |
| Vce(on) (Max) @ Vge, Ic | 600 V | Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V | Current - Drain (Idss) @ Vds (Vgs=0) | 7 A |
| Input Capacitance (Ciss) (Max) @ Vds | 680pF @ 100V | Current - Continuous Drain (Id) @ 25degC | 7A (Tc) |
Mechanical
| Packaging | Tape & Reel (TR) | Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT | Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | D-PAK (TO-252AA) | ||
Product Info
| Series | E | Technology | Si |
| Manufacturer | Vishay Semiconductors | Configuration | Single |
Environmental
| Operating Temperature | - 55 C | ||