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SIHU6N62E-GE3
| Manufacturer | |
| Description | MOSFET N-CH 620V 6A TO-251 MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS |
| Category |
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Business
| Tradename | TrenchFET | Product Category | MOSFET |
| Standard Package | 3,000 | Factory Pack Quantity | 3000 |
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Fall Time | 16 ns |
| FET Feature | Standard | Gate Charge | 34 nC |
| Power - Max | 78W | Power - Rated | 78 W |
| Rise Time (Typ) | 10 ns | Transistor Type | N-Channel |
| Delay to 1st Tap | 22 ns | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 900 mOhm @ 3A, 10V | Vce(on) (Max) @ Vge, Ic | 700 V |
| Current Transfer Ratio (Min) | 1.8 S | Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
| Drain to Source Voltage (Vdss) | 620V | Voltage - Gate Trigger (Vgt) (Max) | 20 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 6 A | Input Capacitance (Ciss) (Max) @ Vds | 578pF @ 100V |
| Current - Continuous Drain (Id) @ 25degC | 6A (Tc) | ||
Mechanical
| Width | 2.39 mm | Height | 6.22 mm |
| Length | 6.73 mm | Packaging | Tube |
| Mounting Type | Through Hole | Mounting Style | Through Hole |
| Package / Case | TO-251-3 Long Leads, IPak, TO-251AB | Supplier Device Package | IPAK (TO-251) |
Product Info
| Series | E | Technology | Si |
| Manufacturer | Vishay Semiconductors | Configuration | Single |
Environmental
| Operating Temperature | - 55 C | ||
Documents & Media
PDF Document
Online Document