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SIHP21N65EF-GE3
| Manufacturer | |
| Description | MOSFET N-CH 650V 21A TO-220AB MOSFET 650V 180mOhms@10V 21A N-Ch EF-SRS MOSFET 650V Vds +/-30V Vgs Rds(On) 0.18@10V |
| Category |
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Business
| Tradename | TrenchFET | Product Category | MOSFET |
| Standard Package | 1,000 | Factory Pack Quantity | 50 |
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Fall Time | 68 ns |
| FET Feature | Standard | Gate Charge | 106 nC |
| Power - Max | 208W | Power - Rated | 208 W |
| Rise Time (Typ) | 34 ns | Transistor Type | N-Channel |
| Delay to 1st Tap | 68 ns | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 11A, 10V | Vce(on) (Max) @ Vge, Ic | 700 V |
| Current Transfer Ratio (Min) | 7 S | Gate Charge (Qg) (Max) @ Vgs | 106nC @ 10V |
| Drain to Source Voltage (Vdss) | 650V | Voltage - Gate Trigger (Vgt) (Max) | 20 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 21 A | Input Capacitance (Ciss) (Max) @ Vds | 2322pF @ 100V |
| Current - Continuous Drain (Id) @ 25degC | 21A (Tc) | ||
Mechanical
| Width | 4.7 mm | Height | 15.49 mm |
| Length | 10.41 mm | Packaging | Tube |
| Mounting Type | Through Hole | Mounting Style | Through Hole |
| Package / Case | TO-220-3 | Supplier Device Package | TO-220AB |
Product Info
| Series | EF | Technology | Si |
| Manufacturer | Vishay Semiconductors | Configuration | Single |
Environmental
| Operating Temperature | - 55 C | ||
Documents & Media
PDF Document
Online Document