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SIHP12N65E-GE3

Manufacturer	Vishay Intertechnology, Inc.
Description	MOSFET N-CH 650V 12A TO-220AB MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS
Category	Discrete Semiconductor ComponentsHigh-Power Discrete Semiconductor ModulesMOSFET Modules

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Tradename	TrenchFET	Product Category	MOSFET
Standard Package	1,000	Factory Pack Quantity	50

RoHS

RoHS Compliant

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	18 ns
FET Feature	Standard	Gate Charge	70 nC
Power - Max	156W	Power - Rated	156 W
Rise Time (Typ)	19 ns	Transistor Type	N-Channel
Delay to 1st Tap	35 ns	Vgs(th) (Max) @ Id	4V @ 250µA
Rds On (Max) @ Id, Vgs	380 mOhm @ 6A, 10V	Vce(on) (Max) @ Vge, Ic	700 V
Current Transfer Ratio (Min)	3.5 S	Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Drain to Source Voltage (Vdss)	650V	Voltage - Gate Trigger (Vgt) (Max)	20 V
Current - Drain (Idss) @ Vds (Vgs=0)	12 A	Input Capacitance (Ciss) (Max) @ Vds	1224pF @ 100V
Current - Continuous Drain (Id) @ 25degC	12A (Tc)

Series	E	Technology	Si
Manufacturer	Vishay Semiconductors	Configuration	Single

Operating Temperature

- 55 C

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