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SIHG22N60E-E3

Manufacturer	Vishay Intertechnology, Inc.
Description	MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247AC MOSFET N-CH 600V 21A TO247AC MOSFET N-Channel 600V 21A TO247AC MOSFET, N CH, 600V, 21A, TO-247AC Vishay E Series 系列 N沟道 MOSFET 晶体管 , 21 A, Vds=600 V, 3针 TO-247AC封装
Category	Discrete Semiconductor ComponentsHigh-Power Discrete Semiconductor ModulesMOSFET Modules

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RoHS	Lead free / RoHS Compliant	EU RoHS	Compliant
Tariff No	85044090

FET Type	MOSFET N-Channel, Metal Oxide	Vgs (Max)	±20 V
FET Feature	Standard	Gate Charge	57 nC
Power - Max	227W	Power - Rated	227 W
Transistor Type	N-Channel	Delay to 1st Tap	59 ns
Number of Elements	1	Vgs(th) (Max) @ Id	4V @ 250µA
Voltage - Breakdown	600 V	Voltage - Threshold	:2V
Resistance - RDS(On)	:0.15ohm	Rds On (Max) @ Id, Vgs	180 mOhm @ 11A, 10V
Power Dissipation (Max)	227 W	Vce(on) (Max) @ Vge, Ic	600 V
On-State Resistance (Max)	0.18 Ω	Current Transfer Ratio (Min)	6.4 S
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V	Switch Time (Ton, Toff) (Max)	18 ns
Drain to Source Voltage (Vdss)	600V	Current - Peak Pulse (10/1000us)	21 A
Voltage - Gate Trigger (Vgt) (Max)	+/- 20 V	Current - Drain (Idss) @ Vds (Vgs=0)	21 A
Input Capacitance (Ciss) (Max) @ Vds	1920pF @ 100V	Current - Continuous Drain (Id) @ 25degC	21A (Tc)

Operating Temperature

+150 °C

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PDF Document