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SIHB30N60E-E3
| Manufacturer | |
| Description | MOSFET N-Channel 600V MOSFET N-CH 600V 29A D2PAK |
| Category |
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Business
| Tradename | TrenchFET | Standard Package | 1,000 |
| Factory Pack Quantity | 1000 | ||
Compliance
| RoHS | Lead free / RoHS Compliant | ||
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | FET Feature | Standard |
| Power - Max | 250W | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 15A, 10V | Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V | Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 100V |
| Current - Continuous Drain (Id) @ 25degC | 29A (Tc) | ||
Mechanical
| Packaging | Tape & Reel (TR) | Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Supplier Device Package | D²PAK (TO-263) |
Product Info
| Series | E | Technology | Si |
| Manufacturer | Vishay Semiconductors | ||
Documents & Media
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