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SIHB24N65E-E3
| Manufacturer | |
| Description | MOSFET 650V 145mOhm@10V 24A N-Ch E-SRS MOSFET N-CH 650V 24A D2PAK MOSFET N-Channel 650V 24A D2PAK MOSFET, N CH, 650V, 24A, D2PAK |
| Category |
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Business
| MOQ | 1 | Unit Pack | 0 |
| Other Names | SIHB24N65EE3 | Product Category | MOSFET |
| Standard Package | 1,000 | ||
Compliance
| RoHS | Lead free / RoHS Compliant | Tariff No | 85044090 |
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Vgs (Max) | ±20 V |
| FET Feature | Standard | Gate Charge | 81 nC |
| Power - Max | 250W | Power - Rated | 250 W |
| Transistor Type | N-Channel | Delay to 1st Tap | 70 ns |
| Number of Elements | 1 | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Voltage - Breakdown | 650 V | Voltage - Threshold | :2V |
| Resistance - RDS(On) | :0.12ohm | Rds On (Max) @ Id, Vgs | 145 mOhm @ 12A, 10V |
| Power Dissipation (Max) | 250 W | Vce(on) (Max) @ Vge, Ic | 650 V |
| On-State Resistance (Max) | 0.145 Ω | Current Transfer Ratio (Min) | 7.1 S |
| Gate Charge (Qg) (Max) @ Vgs | 122nC @ 10V | Switch Time (Ton, Toff) (Max) | 24 ns |
| Drain to Source Voltage (Vdss) | 650V | Current - Peak Pulse (10/1000us) | 24 A |
| Voltage - Gate Trigger (Vgt) (Max) | +/- 20 V | Current - Drain (Idss) @ Vds (Vgs=0) | 24 A |
| Input Capacitance (Ciss) (Max) @ Vds | 2740pF @ 100V | Current - Continuous Drain (Id) @ 25degC | 24A (Tc) |
Mechanical
| Width | 9.65mm | Height | 4.83mm |
| Length | 10.67mm | Weight | 0.00143 |
| Packaging | Tube | Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT | Number of Pins | :3 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Package Cooled | D2PAK |
| Material Finish | :MSL 1 - Unlimited | Size / Dimension | 10.67 x 9.65 x 4.83mm |
| Number of Positions | 3 | Supplier Device Package | D²PAK |
Product Info
| Series | E | Channel Type | Enhancement |
| Card Standard | Power MOSFET | Configuration | Single |
Environmental
| Operating Temperature | +150 °C | ||