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SIHB23N60E-GE3
| Manufacturer | |
| Description | MOSFET N-CH 60V 23A D2PAK MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS MOSFET N-CH 600V 23A D2PAK |
| Category |
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Business
| Tradename | TrenchFET | Product Category | MOSFET |
| Standard Package | 1,000 | Factory Pack Quantity | 1000 |
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Fall Time | 34 ns |
| FET Feature | Standard | Gate Charge | 95 nC |
| Power - Max | 227W | Power - Rated | 227 W |
| Rise Time (Typ) | 38 ns | Transistor Type | N-Channel |
| Delay to 1st Tap | 66 ns | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 158 mOhm @ 12A, 10V | Vce(on) (Max) @ Vge, Ic | 650 V |
| Current Transfer Ratio (Min) | 6.4 S | Gate Charge (Qg) (Max) @ Vgs | 95nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V | Voltage - Gate Trigger (Vgt) (Max) | 20 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 23 A | Input Capacitance (Ciss) (Max) @ Vds | 2418pF @ 100V |
| Current - Continuous Drain (Id) @ 25degC | 23A (Tc) | ||
Mechanical
| Width | 9.65 mm | Height | 4.83 mm |
| Length | 10.67 mm | Packaging | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Mounting Style | SMD/SMT |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Supplier Device Package | D²PAK (TO-263) |
Product Info
| Series | E | Technology | Si |
| Manufacturer | Vishay Semiconductors | Configuration | Single |
Environmental
| Operating Temperature | - 55 C | ||
Documents & Media
Online Document