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SIHB22N60E-GE3
| Manufacturer | |
| Description | MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK MOSFET 650V 180mOhm 21A TO263 MOSFET N-CH 600V 21A D2PAK MOSFET N-Channel 600V 21A D2PAK MOSFET, N CH, 600V, 21A, D2PAK Vishay , N沟道 MOSFET, 21 A, Vds=600 V, 3针 D2PAK封装 |
| Category |
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Business
| MOQ | 1000 | Unit Pack | 1000 |
| Other Names | SIHB22N60EGE3 | Standard Package | 1,000 |
| Standard Package Name | D2PAK | ||
Compliance
| RoHS | Lead free / RoHS Compliant | EU RoHS | Compliant |
| Tariff No | 85044090 | Automotive | NO |
| Leadfree Defin | RoHS-conform | ||
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Vgs (Max) | ±20 V |
| Logic Type | NO | FET Feature | Super Junction |
| Power - Max | 227W | Transistor Type | :N Channel |
| Delay to 1st Tap | 59 ns | Number of Elements | 1 |
| Vgs(th) (Max) @ Id | 4V @ 250µA | Voltage - Breakdown | 600 V |
| Voltage - Threshold | :2V | Resistance - RDS(On) | :0.15ohm |
| Rds On (Max) @ Id, Vgs | n.s.Ohm | Power Dissipation (Max) | 227 W |
| Power (Watts) - Per Port | 227W | On-State Resistance (Max) | 0.18 Ω |
| Voltage - Supply (Vcc/Vdd) | 600V | Gate Charge (Qg) (Max) @ Vgs | 86nC |
| Switch Time (Ton, Toff) (Max) | 18 ns | Drain to Source Voltage (Vdss) | 600V |
| Current - Peak Pulse (10/1000us) | 21 A | Current - Drain (Idss) @ Vds (Vgs=0) | 22A |
| Input Capacitance (Ciss) (Max) @ Vds | 1920pF @ 100V | Current - Continuous Drain (Id) @ 25degC | 21A (Tc) |
Mechanical
| Width | 9.65mm | Height | 4.83mm |
| Length | 10.67mm | Weight | 0.00143 |
| Packaging | Tube | Tab Width | Tab |
| Lead Style | Gull-wing | Mounting Type | Surface Mount |
| Number of Pins | :3 | Package / Case | TO263 |
| Package Cooled | D2PAK | Material Finish | :MSL 1 - Unlimited |
| Length - Overall | 10.41(Max) | Package Quantity | D2PAK |
| Size / Dimension | 10.67 x 9.65 x 4.83mm | Number of Positions | 3 |
| Shell Size - Insert | 4.83(Max) | Supplier Device Package | D²PAK |
Product Info
| Matchcode | SIHB22N60E | Technology | ESeries |
| Channel Type | N | Card Standard | Power MOSFET |
| Standard Leadtime | 12 weeks | Printed Circuit Board | 2 |
Environmental
| Operating Temperature | +150 °C | Thermal Resistance @ GPM | 0.55K/W |
Documents & Media
PDF Document
PDF Document