ONEIC.US
SI7882DP-T1-E3

点击放大查看

SI7882DP-T1-E3

Manufacturer
Description
Trans MOSFET N-CH 12V 13A 8-Pin PowerPAK SO T/R N-CH REDUCED QG FAST SWITCH MOSFET MOSFET N-CH D-S 12V PPAK 8SOIC MOSFET, N, 8-SOIC
Category
对参数有疑问?问 AI 助手

Business

MOQ1Unit Pack0
Standard PackageTape & Reel

Compliance

RoHSLead free / RoHS CompliantEU RoHSCompliant
Tariff No85412900

Electrical

FET TypeMOSFET N-Channel, Metal OxideVgs (Max)±8 V
FET FeatureLogic Level GatePower - Max1.9W
Fall Time (Typ)35 nsTransistor Type:N Channel
Delay to 1st Tap82 nsNumber of Elements1
Vgs(th) (Max) @ Id1.4V @ 250µAVoltage - Breakdown12 V
Voltage - Threshold:1.4VCurrent Rating (Max):13A
Resistance - RDS(On):5.5mohmContact Voltage (Max):12V
Rds On (Max) @ Id, Vgs5.5@4.5V mOhmPower Dissipation (Max):5W
Propagation Delay (Max)32 nsOn-State Resistance (Max)5.5@4.5V
Gate Charge (Qg) (Max) @ Vgs30nC @ 4.5VSwitch Time (Ton, Toff) (Max)28 ns
Drain to Source Voltage (Vdss)12VCurrent - Peak Pulse (10/1000us)13 A
Current - Continuous Drain (Id) @ 25degC13A (Ta)

Mechanical

Width5.89Weight0.0001
PackagingTape and ReelLead StyleNo Lead
Termination:SMDMounting TypeSurface Mount
Number of Pins:8Package / Case8PowerPAK SO
Material Finish:MSL 1 - UnlimitedLength - Overall4.9
Package QuantityPowerPAK SONumber of Positions8
Shell Size - Insert1.04Supplier Device PackagePowerPAK® SO-8

Product Info

Channel TypeEnhancementPrinted Circuit Board8

Environmental

Operating Temperature-55 to 150 °C

Documents & Media

PDF Document
PDF Document