点击放大查看
SI5435BDC-T1-GE3
| Manufacturer | |
| Description | MOSFET 30V 5.9A 2.5W 45mohm @ 10V Trans MOSFET P-CH 30V 4.3A 8-Pin Chip FET T/R MOSFET P-CH 30V 4.3A 1206-8 P CHANNEL MOSFET, -30V, 5.9A, 1206 |
| Category |
对参数有疑问？问 AI 助手
Business
| MOQ | 3000 | Unit Pack | 3000 |
| Other Names | SI5435BDC-T1-GE3CT | Part # Aliases | SI5435BDC-GE3 |
| Product Category | MOSFET | Standard Package | 3,000 |
| Factory Pack Quantity | 3000 | Standard Package Name | Chip FET |
Compliance
| RoHS | Lead free / RoHS Compliant | EU RoHS | Compliant |
| Tariff No | 85412900 | ||
Electrical
| FET Type | MOSFET P-Channel, Metal Oxide | Fall Time | 12 ns |
| Vgs (Max) | :8V | FET Feature | Logic Level Gate |
| Power - Max | 1.3W | Power - Rated | 1.3 W |
| Rise Time (Typ) | 12 ns | Transistor Type | P-Channel |
| Delay to 1st Tap | 32 ns | Number of Elements | 1 |
| Vgs(th) (Max) @ Id | 3V @ 250µA | Voltage - Breakdown | 30 |
| Voltage - Threshold | :-3V | Resistance - RDS(On) | :80mohm |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 4.3A, 10V | Power Dissipation (Max) | 1300 |
| Vce(on) (Max) @ Vge, Ic | 30 V | On-State Resistance (Max) | 45@10V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V | Drain to Source Voltage (Vdss) | 30V |
| Current - Peak Pulse (10/1000us) | 4.3 | Voltage - Gate Trigger (Vgt) (Max) | +/- 20 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 4.3 A | Current - Continuous Drain (Id) @ 25degC | 4.3A (Ta) |
Mechanical
| Width | 1.65 | Weight | 0.00001 |
| Packaging | Tape and Reel | Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT | Number of Pins | :8 |
| Package / Case | 8-SMD, Flat Lead | Length - Overall | 3.05 |
| Package Quantity | Chip FET | Number of Positions | 8 |
| Shell Size - Insert | 1.1(Max) | Supplier Device Package | 1206-8 ChipFET™ |
Product Info
| Channel Type | Enhancement | Configuration | Single |
| Printed Circuit Board | 8 | ||
Environmental
| Operating Temperature | - 55 C | ||
Documents & Media
PDF Document