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SI4816DY-T1-E3
| Manufacturer | |
| Description | Trans MOSFET N-CH 30V 5.3A/7.7A 8-Pin SOIC N T/R MOSFET N-CH DUAL 30V 8-SOIC DUAL N CH/SCHOTTKY MOSFET, 30V SOIC |
| Category |
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Business
| MOQ | 1 | Unit Pack | 0 |
| Other Names | SI4816DY-T1-E3CT | Standard Package | Tape & Reel |
| Standard Package Name | SOIC | ||
Compliance
| RoHS | Lead free / RoHS Compliant | EU RoHS | Compliant |
| Tariff No | 85412100 | Rad Hardened | No |
Electrical
| FET Type | 2 N-Channel (Dual) | Vgs (Max) | 20 V |
| FET Feature | Logic Level Gate | Power - Max | 1W, 1.25W |
| Power - Rated | 7.7 W | Fall Time (Typ) | 8@Channel 1|12@Channel 2 ns |
| Transistor Type | :N Channel + Schottky | Delay to 1st Tap | 26@Channel 1|44@Channel 2 ns |
| Number of Elements | 2 | Vgs(th) (Max) @ Id | 2V @ 250µA |
| Voltage - Breakdown | 30 V | Voltage - Threshold | :2V |
| Resistance - RDS(On) | :18mohm | Rds On (Max) @ Id, Vgs | 22@10V@Channel 1|13@10V@Channel 2 mOhm |
| Power Dissipation (Max) | 1000@Channel 1|1250@Channel 2 | Propagation Delay (Max) | 5 ns |
| Vce(on) (Max) @ Vge, Ic | 30 V | On-State Resistance (Max) | 22@10V@Channel 1|13@10V@Channel 2 |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V | Switch Time (Ton, Toff) (Max) | 10@Channel 1|15@Channel 2 ns |
| Drain to Source Voltage (Vdss) | 30V | Current - Peak Pulse (10/1000us) | 5.3@Channel 1|7.7@Channel 2 A |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5.3 A | Current - Continuous Drain (Id) @ 25degC | 5.3A, 7.7A |
Mechanical
| Width | 4(Max) | Weight | 0.002 |
| Packaging | Tape and Reel | Lead Style | Gull-wing |
| Mounting Type | Surface Mount | Package / Case | 8SOIC N |
| Package Cooled | SOIC N | Length - Overall | 5(Max) |
| Package Quantity | SOIC N | Number of Positions | 8 |
| Shell Size - Insert | 1.55(Max) | Supplier Device Package | 8-SOIC N |
Product Info
| Type | Power MOSFET | DELETED | Compliant |
| Polarity | N | Channel Type | Enhancement |
| Printed Circuit Board | 8 | ||
Environmental
| Operating Temperature | -55 to 150 °C | ||