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SIS410DN-T1-GE3

Manufacturer	Vishay Intertechnology, Inc.
Description	Trans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R MOSFET N-CH D-S 20V PPAK 1212-8 MOSFET 20V 35A 5.2W MOSFET, N-CH, 20V, 35A, POWERPAK8
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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RoHS	Lead free / RoHS Compliant	EU RoHS	Compliant
Tariff No	85411000

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	15 ns
Vgs (Max)	±20 V	FET Feature	Standard
Power - Max	52W	Power - Rated	5.2 W
Rise Time (Typ)	15 ns	Transistor Type	N-Channel
Delay to 1st Tap	30 ns	Number of Elements	1
Vgs(th) (Max) @ Id	2.5V @ 250µA	Voltage - Breakdown	20 V
Voltage - Threshold	:1.2V	Current Rating (Max)	:35A
Resistance - RDS(On)	:4mohm	Rds On (Max) @ Id, Vgs	4.8@10V mOhm
Power Dissipation (Max)	:5.2W	Propagation Delay (Max)	15 ns
Vce(on) (Max) @ Vge, Ic	20 V	On-State Resistance (Max)	4.8@10V
Current Transfer Ratio (Min)	70 S	Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Switch Time (Ton, Toff) (Max)	25 ns	Drain to Source Voltage (Vdss)	20V
Current - Peak Pulse (10/1000us)	22 A	Voltage - Gate Trigger (Vgt) (Max)	+/- 20 V
Current - Drain (Idss) @ Vds (Vgs=0)	35 A	Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 10V
Current - Continuous Drain (Id) @ 25degC	22A (Ta), 35A (Tc)

Channel Type	Enhancement	Configuration	Single
Printed Circuit Board	8

Operating Temperature

-55 to 150 °C

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PDF Document