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SI1555DL-T1-E3

Manufacturer	Vishay Intertechnology, Inc.
Description	Trans MOSFET N/P-CH 20V/8V 0.66A/0.57A 6-Pin SC-70 T/R MOSFET N/P-CH 20/8V SC70-6 MOSFET 20/8 0.7/0.6 MOSFET, NP CH, 20/8V, 6SC-70 MOSFET;20VN-CH,8VP-CHCOMPPAIR
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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RoHS	Lead free / RoHS Compliant	EU RoHS	Compliant
Tariff No	85412900

FET Type	N and P-Channel	Fall Time	16 ns at N Channel, 25 ns at P Channel
Vgs (Max)	±12@N Channel\|±8@P Channel V	FET Feature	Logic Level Gate
Power - Max	270mW	Power - Rated	270 mW
Rise Time (Typ)	16 ns at N Channel, 25 ns at P Channel	Transistor Type	N and P-Channel
Delay to 1st Tap	10 ns	Number of Elements	2
Vgs(th) (Max) @ Id	1.4V @ 250µA	Voltage - Breakdown	20@N Channel\|8@P Channel V
Voltage - Threshold	:600mV	Resistance - RDS(On)	:0.32ohm
Rds On (Max) @ Id, Vgs	385@4.5V@N Channel\|600@4.5V@P Channel mOhm	Power Dissipation (Max)	:270mW
Propagation Delay (Max)	16@N Channel\|25@P Channel ns	Vce(on) (Max) @ Vge, Ic	+ 20 V, - 8 V
On-State Resistance (Max)	385@4.5V@N Channel\|600@4.5V@P Cha...	Gate Charge (Qg) (Max) @ Vgs	1.2nC @ 4.5V
Switch Time (Ton, Toff) (Max)	10@N Channel\|6@P Channel ns	Drain to Source Voltage (Vdss)	20V, 8V
Current - Peak Pulse (10/1000us)	0.66@N Channel\|0.57@P Channel A	Voltage - Gate Trigger (Vgt) (Max)	+/- 12 V, +/- 8 V
Current - Drain (Idss) @ Vds (Vgs=0)	0.7 A, 0.6 A	Current - Continuous Drain (Id) @ 25degC	660mA, 570mA

Channel Type

N|P

Configuration

Dual

Operating Temperature

-55 to 150 °C