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BPW77NA
| Manufacturer | |
| Description | Phototransistor IR Chip Silicon 850nm 3-Pin TO-206AA Phototransistors 10 Degree 250mW PHOTOTRANSISTOR NPN TO-18 PHOTOTRANSISTOR, NPN, 3-TO-18 Phototransistor; 850nm; 70V; 20°; Lens: transparent Vishay 红外+可见光 光电晶体管 , ±10 °半感光角度, 450 → 1080 nm, TO-18 封装 |
| Category |
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Business
| Product | Phototransistors | Other Names | 751-1020 |
| Product Category | Phototransistors | Standard Package | Bulk, Tape & Reel |
| Factory Pack Quantity | 1000 | Standard Package Name | TO-18 |
Compliance
| RoHS | RoHS Compliant | EU RoHS | Compliant |
| Tariff No | 85369010 | ||
Electrical
| Wavelength | 850 nm | Power - Max | 250mW |
| Sensor Type | phototransistor | Current - UL | 10mA |
| Sensing Angle | 20 ° | Viewing Angle | Top View |
| Rise Time (Typ) | :6µs | Transistor Type | Phototransistor |
| Voltage - Supply | 70 V | Wavelength - Peak | 850 nm |
| Number of Channels | 1 | Current - Dark (Max) | 100 nA |
| Current - Dark (Typ) | :50mA | Current Rating (Max) | 15000 |
| Vce Saturation (Max) | 0.15 V | Voltage - Input (Min) | 70 |
| Power - Average Forward | :250mW | Power Dissipation (Max) | 250 mW |
| Current - Dark (Id) (Max) | 100nA | Current - Collector (Ic) (Max) | 50 mA |
| Current - Collector Cutoff (Max) | 50 mA | ||
Mechanical
| Weight | 0.001 | Packaging | Bulk |
| Lead Style | Through Hole | Lens Style | Domed |
| Orientation | Top View | Lens Diameter | 4 mm |
| Lens Material | transparent | Mounting Type | Through Hole |
| Number of Pins | :3 | Package / Case | 3TO-206AA |
| Package Quantity | TO-206AA | Size / Dimension | see |
| Diameter - Outside | 5.5 | Number of Positions | 3 |
| Shell Size - Insert | 6.15 | ||
Product Info
| Spg | 150 | Type | IR Chip |
| Polarity | NPN | Number of Units | 1 |
| Printed Circuit Board | 3 | ||
Environmental
| Operating Temperature | + 125 C | ||
