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BPW76B

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BPW76B

Manufacturer
Description
Phototransistor Chip Silicon 850nm 3-Pin TO-206AA Phototransistors NPN Phototransistor 80V 250mW 850nm PHOTOTRANSISTOR NPN TO-18 IR phototransistor TO-18, BPW76B, Vishay Telefunken Vishay 红外+可见光 光电晶体管 , ±40 °半感光角度, 450 → 1080 nm, TO-18 封装
Category
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Business

ProductPhototransistorsOther Names751-1019
Product CategoryPhototransistorsStandard PackageBulk
Factory Pack Quantity1000Standard Package NameTO-18

Compliance

RoHSRoHS CompliantEU RoHSCompliant
Rad HardenedNo

Electrical

Current1.2 mAWavelength850 nm
Power - Max250mWPower - Rated0.25 W
Sensing Angle80 °Viewing AngleTop View
Spectral Range450 → 1080 nmRise Time (Typ)6µs
Transistor TypePhototransistorVoltage - Supply70 V
Wavelength - Peak850 nmNumber of Channels1
Number of Elements1Current - Dark (Max)100 nA
Current - Dark (Typ)100 nACurrent Rating (Max)1.2
Vce Saturation (Max)0.15 VVoltage - Input (Min)70
Power Dissipation (Max)250 mWCurrent - Dark (Id) (Max)100nA
Current - Collector (Ic) (Max)50 mALoad Side Connections Per Pole3
Current - Collector Cutoff (Max)50 mACurrent - LED Trigger (Ift) (Max)1200 uA
Propagation Delay tpLH / tpHL (Max)5µs

Mechanical

Height5.2mmDiameter4.7mm
PackagingBulkLead StyleThrough Hole
Lens StyleFlatOrientationTop View
Lens Diameter3.9 mmMounting TypeThrough Hole
Package / Case3TO-206AAPackage CooledTO-18
Package QuantityTO-206AASize / Dimension4.7 x 5.2mm
Diameter - Outside5.5Number of Contacts3
Number of Positions3Shell Size - Insert6.15

Product Info

TypeChipDELETEDCompliant
PolarityNPNPrinted Circuit Board3
Angle of Incidence (AOI)80 °

Environmental

Operating Temperature+ 125 C

Documents & Media

PDF Document