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BPW16N

Manufacturer	Vishay Intertechnology, Inc.
Description	Phototransistor Chip Silicon 825nm 2-Pin T-3/4 Phototransistors NPN Phototransistor 32V 100mW 825nm PHOTOTRANSISTOR NPN 1.8MM CLEAR PHOTOTRANSISTOR, NPN, T-3/4
Category	OptoelectronicsDiscrete LED IndicationHardware/Accessories

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RoHS	RoHS Compliant	EU RoHS	Compliant
Tariff No	85414090	Rad Hardened	No

Wavelength	825 nm	Power - Max	100mW
Power - Rated	0.1 W	Sensing Angle	80 °
Viewing Angle	Top View	Rise Time (Typ)	:4.8µs
Transistor Type	Phototransistor	Voltage - Supply	32 V
Wavelength - Peak	825 nm	Number of Channels	1
Number of Elements	1	Current - Dark (Max)	200 nA
Current - Dark (Typ)	200 nA	Current Rating (Max)	140(Typ)
Vce Saturation (Max)	0.3 V	Voltage - Input (Min)	5 V
Power - Average Forward	:100mW	Power Dissipation (Max)	100 mW
Current - Dark (Id) (Max)	200nA	Current - Collector (Ic) (Max)	50 mA
Current - Collector Cutoff (Max)	50 mA	Current - LED Trigger (Ift) (Max)	140 uA