| FET Type | MOSFET N-Channel, Metal Oxide | Fall Time | 7 ns |
| Vgs (Max) | 30 V | FET Feature | Super Junction |
| Gate Charge | 15 nC | Power - Max | 30W |
| Power - Rated | 30 W | Rise Time (Typ) | 18 ns |
| Transistor Type | N-Channel | Delay to 1st Tap | 55 ns |
| Number of Channels | 1 Channel | Vgs(th) (Max) @ Id | 3.7V @ 350µA |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 3.5A, 10V | Power - Average Forward | 30 W |
| Vce(on) (Max) @ Vge, Ic | 600 V | On-State Resistance (Max) | 500 mOhms |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V | Switch Time (Ton, Toff) (Max) | 40 ns |
| Drain to Source Voltage (Vdss) | 600V | Voltage - Gate Trigger (Vgt) (Max) | 30 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 7 A | Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 300V |
| Current - Continuous Drain (Id) @ 25degC | 7A (Ta) | |
