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TH58BYG2S3HBAI6
| Manufacturer | |
| Description | 4GB SLC BENAND 24NM BGA 6.5X8 EEPROM 1.8V, 4 Gbit CMOS NAND EEPROM |
| Category |
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Business
| Factory Pack Quantity | 338 | ||
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Interface | Parallel | Access Time | 25 ns |
| Memory Size | 4 Gbit | Voltage - Supply | 1.8 V |
Mechanical
| Packaging | Tray | Mounting Style | SMD/SMT |
| Package / Case | BGA-63 | ||
Product Info
| Series | TH58BYG2S3 | Manufacturer | Toshiba |
Environmental
| Operating Temperature | - 40 C | ||