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HN1C03F-B(TE85L,F)
| Manufacturer | |
| Description | Trans GP BJT NPN 20V 0.3A 6-Pin SM T/R TRAN DUAL NPN 20V 0.3A SM6 Transistors Bipolar - BJT Dual Trans NPN x 2 20V, 0.3A, SM6 Bipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, SM6 |
| Category |
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Business
| Other Names | HN1C03F-B(TE85LF)TR | Standard Package | 3,000 |
Compliance
| RoHS | Lead free / RoHS Compliant | ||
Electrical
| Power - Max | 300mW | Frequency - Max | 30(Typ) MHz |
| Transistor Type | 2 NPN (Dual) | Voltage - Supply | 20V |
| Vce Saturation (Max) | 42 mV | Voltage - Input (Min) | 20 V |
| Frequency - Transition | 30MHz | Gain Bandwidth Product | 30 MHz |
| Power - Average Forward | 300 mW | Power Dissipation (Max) | 300 mW |
| Vce(on) (Max) @ Vge, Ic | 50 V | Vce Saturation (Max) @ Ib, Ic | 100mV @ 3mA, 30mA |
| Current - Collector (Ic) (Max) | 300mA | Current - Collector Cutoff (Max) | 0.3 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 350@4mA@2V | ||
Mechanical
| Packaging | Tape & Reel (TR) | Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT | Package / Case | 6SM |
| Number of Positions | 6 | Supplier Device Package | SM6 |
Product Info
| Type | NPN | Series | HN1C03 |
| Manufacturer | Toshiba | Configuration | Dual |
Environmental
| Operating Temperature | -55 to 150 °C | ||