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2SK3176(F)

Manufacturer	Toshiba Corporation
Description	Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-3PN MOSFET N-CH 200V 30A TO-3PN 2SK3176(F), N-channel MOSFET Transistor 30A 200V, 3-Pin TO-3PN MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm Toshiba , N沟道 MOSFET, 30 A, Vds=200 V, 3针 TO-3PN封装
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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Business

Product Category	MOSFET	Standard Package	Bulk
Factory Pack Quantity	50

RoHS

Lead free / RoHS Compliant

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	25 ns
Vgs (Max)	±20 V	FET Feature	Logic Level Gate
Power - Max	150W	Power - Rated	150 W
Fall Time (Typ)	25 ns	Output Function	增强
Rise Time (Typ)	15 ns	Transistor Type	N-Channel
Voltage - Supply	200 V	Number of Channels	1 Channel
Number of Elements	1	Resistance - Input	0.052 Ω
Vgs(th) (Max) @ Id	3.5V @ 1mA	Voltage - Breakdown	200 V
Rds On (Max) @ Id, Vgs	52@10V mOhm	Power - Average Forward	150 W
Power Dissipation (Max)	150 W	Propagation Delay (Max)	15 ns
Vce(on) (Max) @ Vge, Ic	200 V	On-State Resistance (Max)	0.052 Ω
Gate Charge (Qg) (Max) @ Vgs	125nC @ 10V	Drain to Source Voltage (Vdss)	200V
Current - Peak Pulse (10/1000us)	30 A	Voltage - Gate Trigger (Vgt) (Max)	+/- 20 V
Current - Drain (Idss) @ Vds (Vgs=0)	30 A	Input Capacitance (Ciss) (Max) @ Vds	5400pF @ 10V
Current - Continuous Drain (Id) @ 25degC	30A (Ta)

Operating Temperature

-55 to 150 °C

PDF Document

PDF Document

PDF Document