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TPS1120DG4

Manufacturer	Texas Instruments Incorporated
Description	Trans MOSFET P-CH 15V 1.17A 8-Pin SOIC Tube MOSFET 2P-CH 15V 1.17A 8-SOIC TPS1120DG4, Dual P-channel MOSFET Transistor 1.17A 15V, 8-Pin SOIC MOSFET Dual P-Ch Enh-Mode MOSFET
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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Product Category	MOSFET	Standard Package	Rail / Tube
Factory Pack Quantity	75	Standard Package Name	SOIC

RoHS	Lead free / RoHS Compliant	EU RoHS	Compliant
Rad Hardened	No

FET Type	2 P-Channel (Dual)	Fall Time	10 ns
Vgs (Max)	2 V	FET Feature	Logic Level Gate
Power - Max	840mW	Power - Rated	0.84 W
Fall Time (Typ)	2 ns	Rise Time (Typ)	10 ns
Transistor Type	P-Channel	Delay to 1st Tap	13 ns
Number of Elements	2	Vgs(th) (Max) @ Id	1.5V @ 250µA
Voltage - Breakdown	15 V	Rds On (Max) @ Id, Vgs	400@4.5V mOhm
Power Dissipation (Max)	0.84 W	Propagation Delay (Max)	10 ns
Vce(on) (Max) @ Vge, Ic	15 V	On-State Resistance (Max)	0.4 Ω
Current Transfer Ratio (Min)	2.5 S	Gate Charge (Qg) (Max) @ Vgs	5.45nC @ 10V
Switch Time (Ton, Toff) (Max)	4.5 ns	Drain to Source Voltage (Vdss)	15V
Current - Peak Pulse (10/1000us)	1.17 A	Voltage - Gate Trigger (Vgt) (Max)	+ 2 V, - 15 V
Current - Drain (Idss) @ Vds (Vgs=0)	- 2.7 V	Current - Continuous Drain (Id) @ 25degC	1.17A

Operating Temperature

-40 to 125 °C

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