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TPS1101DRG4
| Manufacturer | |
| Description | Trans MOSFET P-CH 15V 2.3A 8-Pin SOIC T/R MOSFET P-CH 15V 2.3A 8-SOIC MOSFET Single P-Ch Enh-Mode MOSFET |
| Category |
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Business
| Product Category | MOSFET | Standard Package | Tape & Reel |
| Factory Pack Quantity | 2500 | ||
Compliance
| RoHS | Lead free / RoHS Compliant | Rad Hardened | No |
Electrical
| FET Type | MOSFET P-Channel, Metal Oxide | Fall Time | 5.5 ns |
| Vgs (Max) | 2 V | FET Feature | Logic Level Gate |
| Power - Max | 791mW | Power - Rated | 791 mW |
| Fall Time (Typ) | 13 ns | Rise Time (Typ) | 5.5 ns |
| Transistor Type | P-Channel | Delay to 1st Tap | 19 ns |
| Number of Elements | 1 | Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Voltage - Breakdown | 15 V | Rds On (Max) @ Id, Vgs | 90(Typ)@10V mOhm |
| Propagation Delay (Max) | 5.5 ns | Vce(on) (Max) @ Vge, Ic | 15 V |
| On-State Resistance (Max) | 0.09 ohm | Gate Charge (Qg) (Max) @ Vgs | 11.25nC @ 10V |
| Switch Time (Ton, Toff) (Max) | 6.5 ns | Drain to Source Voltage (Vdss) | 15V |
| Current - Peak Pulse (10/1000us) | 2.3 A | Voltage - Gate Trigger (Vgt) (Max) | - 15 V, 2 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2.3 A | Current - Continuous Drain (Id) @ 25degC | 2.3A (Ta) |
Mechanical
| Weight | 0.002677 oz | Packaging | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Mounting Style | SMD/SMT |
| Package / Case | 8SOIC | Package Cooled | SOIC |
| Number of Positions | 8 | Supplier Device Package | 8-SOIC |
Product Info
| Type | Small Signal | Series | TPS1101 |
| Polarity | P | Channel Type | P |
| Configuration | Single Quad Drain Triple Source | ||
Environmental
| Operating Temperature | -40 to 125 °C | ||
Documents & Media
Online Document
Online Document