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TPS1101DR
| Manufacturer | |
| Description | Trans MOSFET P-CH 15V 2.3A 8-Pin SOIC T/R MOSFET P-CH 15V 2.3A 8-SOIC MOSFET Single P-Ch Enh-Mode MOSFET |
| Category |
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Business
| Product | MOSFET Small Signal | Product Category | MOSFET |
| Standard Package | Tape & Reel | Factory Pack Quantity | 2500 |
| Standard Package Name | SOIC | ||
Compliance
| RoHS | Lead free / RoHS Compliant | EU RoHS | Compliant |
| Rad Hardened | No | ||
Electrical
| FET Type | MOSFET P-Channel, Metal Oxide | Fall Time | 5.5 ns |
| Vgs (Max) | 2 V | FET Feature | Logic Level Gate |
| Power - Max | 791mW | Noise Figure | Not Required dB |
| Power - Rated | 791 mW | Power - Output | Not Required dB |
| Fall Time (Typ) | 13 ns | Frequency - Max | Not Required MHz |
| Rise Time (Typ) | 5.5 ns | Transistor Type | P-Channel |
| Delay to 1st Tap | 19 ns | Number of Channels | 1 Channel |
| Number of Elements | 1 | Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Voltage - Breakdown | 15 V | Rds On (Max) @ Id, Vgs | 90(Typ)@10V mOhm |
| Power - Average Forward | 791 mW | Power Dissipation (Max) | 791 |
| Propagation Delay (Max) | 5.5 ns | Vce(on) (Max) @ Vge, Ic | 15 V |
| Current Drain (Id) - Max | 2.3 A | On-State Resistance (Max) | 0.09 ohm |
| Gate Charge (Qg) (Max) @ Vgs | 11.25nC @ 10V | Switch Time (Ton, Toff) (Max) | 6.5 ns |
| Vce Saturation (Max) @ Ib, Ic | Not Required % | Drain to Source Voltage (Vdss) | 15V |
| Current - Peak Pulse (10/1000us) | 2.3 A | Voltage - Gate Trigger (Vgt) (Max) | - 15 V, 2 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2.3 A | Current - Continuous Drain (Id) @ 25degC | 2.3A (Ta) |
Mechanical
| Width | 4(Max) | Height | 1.75 mm |
| Length | 4.9 mm | Weight | 0.002677 oz |
| Packaging | Tape and Reel | Lead Style | Gull-wing |
| Mounting Type | Surface Mount | Mounting Style | SMD/SMT |
| Package / Case | 8SOIC | Package Cooled | SOIC |
| Length - Overall | 5(Max) | Package Quantity | SOIC |
| Number of Positions | 8 | Shell Size - Insert | 1.5(Max) |
| Supplier Device Package | 8-SOIC | ||
Product Info
| Type | Small Signal | Series | TPS1101 |
| Polarity | P | Technology | Si |
| Channel Type | P | Manufacturer | Texas Instruments |
| Configuration | Single Quad Drain Triple Source | Printed Circuit Board | 8 |
Environmental
| Operating Temperature | -40 to 125 °C | ||