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TPS1100DR

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TPS1100DR

Manufacturer
Description
Trans MOSFET P-CH 15V 1.6A 8-Pin SOIC T/R MOSFET Single P-Ch Enh-Mode MOSFET MOSFET P-CH 15V 1.6A 8-SOIC
Category
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Business

Product CategoryMOSFETStandard PackageTape & Reel
Factory Pack Quantity2500Standard Package NameSOIC

Compliance

RoHSRoHS CompliantEU RoHSCompliant

Electrical

FET TypeMOSFET P-Channel, Metal OxideFall Time10 ns
Vgs (Max)2 VFET FeatureLogic Level Gate
Power - Max791mWPower - Rated791 mW
Fall Time (Typ)2 nsRise Time (Typ)10 ns
Transistor TypeP-ChannelDelay to 1st Tap13 ns
Number of Elements1Vgs(th) (Max) @ Id1.5V @ 250µA
Voltage - Breakdown15 VRds On (Max) @ Id, Vgs400@4.5V mOhm
Power Dissipation (Max)791Propagation Delay (Max)10 ns
Vce(on) (Max) @ Vge, Ic15 VOn-State Resistance (Max)400@4.5V
Gate Charge (Qg) (Max) @ Vgs5.45nC @ 10VSwitch Time (Ton, Toff) (Max)4.5 ns
Drain to Source Voltage (Vdss)15VCurrent - Peak Pulse (10/1000us)1.6 A
Voltage - Gate Trigger (Vgt) (Max)- 15 V, 2 VCurrent - Drain (Idss) @ Vds (Vgs=0)1.6 A
Current - Continuous Drain (Id) @ 25degC1.6A (Ta)

Mechanical

Width4(Max)Weight0.002677 oz
PackagingReelLead StyleGull-wing
Mounting TypeSurface MountMounting StyleSMD/SMT
Package / Case8SOICLength - Overall5(Max)
Package QuantitySOICNumber of Positions8
Shell Size - Insert1.5(Max)Supplier Device Package8-SOIC

Product Info

SeriesTPS1100Channel TypeP
ConfigurationSingle Quad Drain Triple SourcePrinted Circuit Board8

Environmental

Operating Temperature-40 to 125 °C