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TPS1100D

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TPS1100D

Manufacturer
Description
Trans MOSFET P-CH 15V 1.6A 8-Pin SOIC Tube MOSFET MOSFET 10ns RT MOSFET P-CH 15V 1.6A 8-SOIC
Category
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Business

ProductMOSFET Small SignalOther Names296-3379-5
Product CategoryMOSFETStandard PackageRail / Tube
Factory Pack Quantity75Standard Package NameSOIC

Compliance

RoHSRoHS CompliantEU RoHSCompliant
Rad HardenedNo

Electrical

FET TypeMOSFET P-Channel, Metal OxideFall Time10 ns
Vgs (Max)2 VFET FeatureLogic Level Gate
Power - Max791mWNoise FigureNot Required dB
Power - Rated0.791 WPower - OutputNot Required dB
Fall Time (Typ)2 nsFrequency - MaxNot Required MHz
Rise Time (Typ)10 nsTransistor TypeP-Channel
Delay to 1st Tap13 nsNumber of Channels1 Channel
Number of Elements1Vgs(th) (Max) @ Id1.5V @ 250µA
Voltage - Breakdown15 VRds On (Max) @ Id, Vgs400@4.5V mOhm
Power - Average Forward0.791 WPower Dissipation (Max)791
Propagation Delay (Max)10 nsVce(on) (Max) @ Vge, Ic- 15 V
Current Drain (Id) - Max1.6 AOn-State Resistance (Max)0.4 ohm
Current Transfer Ratio (Min)2.5 SGate Charge (Qg) (Max) @ Vgs5.45nC @ 10V
DC Resistance (DCR) - Primary2.5 SSwitch Time (Ton, Toff) (Max)4.5 ns
Vce Saturation (Max) @ Ib, IcNot Required %Drain to Source Voltage (Vdss)15V
Current - Peak Pulse (10/1000us)1.6 AVoltage - Gate Trigger (Vgt) (Max)- 15 V
Current - Drain (Idss) @ Vds (Vgs=0)+/- 1.6 ACurrent - Continuous Drain (Id) @ 25degC1.6A (Ta)

Mechanical

Width4(Max)Height1.75 mm
Length4.9 mmWeight0.002677 oz
PackagingTubeLead StyleGull-wing
Mounting TypeSurface MountMounting StyleSMD/SMT
Package / Case8SOICPackage CooledSOIC
Length - Overall5(Max)Package QuantitySOIC
Number of Positions8Shell Size - Insert1.5(Max)
Supplier Device Package8-SOIC

Product Info

TypeSmall SignalSeriesTPS1100
PolarityPTechnologySi
Channel TypePManufacturerTexas Instruments
ConfigurationSingle Quad Drain Triple SourcePrinted Circuit Board8

Environmental

Operating Temperature-40 to 125 °C

Documents & Media

PDF Document