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CSD87331Q3D

Manufacturer	Texas Instruments Incorporated
Description	MOSFET 30V Sync Buck NexFET Power Block Synchronous Buck NexFET Power Block 8-Pin SON EP T/R IC PWR BLOCK SYNC BUCK 30V 8SON 30-V Synchronous Buck NexFET™ Power Block Texas Instruments 双 Si N沟道 MOSFET 模块 , 45 A, Vds=30 V, 8针 SON封装
Category	Discrete Semiconductor ComponentsHigh-Power Discrete Semiconductor ModulesMOSFET Modules

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RoHS	Contains lead / RoHS compliant by exemption	EU RoHS	Compliant
Part Status	ACTIVE	Rad Hardened	No

Current	10	FET Type	2 N-Channel (Half Bridge)
Fall Time	1.3 ns, 2.4 ns	Vgs (Max)	10
FET Feature	Standard	Gate Charge	2.7 nC, 6.4 nC
Power - Max	6W	Power Level	1.3
Power - Rated	6 W	Delay Time - ON	3.4 ns，3.8 ns
Output Function	增强	Rise Time (Typ)	4.5 ns, 4.7 ns
Transistor Type	N-Channel	Delay Time - OFF	7.4 ns, 11.2 ns
Delay to 1st Tap	7.4 ns, 11.2 ns	Voltage - Supply	30 V
Number of Channels	2 Channel	Number of Elements	2
Resistance - Input	5.5 mΩ，18 mΩ	Vgs(th) (Max) @ Id	2.1V @ 250µA
Rds On (Max) @ Id, Vgs	18 mOhms	Power - Average Forward	6 W
Power Dissipation (Max)	6 W	Vce(on) (Max) @ Vge, Ic	30 V
On-State Resistance (Max)	18 mOhms, 5.5 mOhms	Current Transfer Ratio (Min)	48 S / 26 S
Gate Charge (Qg) (Max) @ Vgs	3.2nC @ 4.5V	Switch Time (Ton, Toff) (Max)	3.4 ns, 3.8 ns
Drain to Source Voltage (Vdss)	30V	Voltage - Gate Trigger (Vgt) (Max)	2.1 V, 1.2 V
Current - Drain (Idss) @ Vds (Vgs=0)	15 A	Input Capacitance (Ciss) (Max) @ Vds	518pF @ 15V
Current - Continuous Drain (Id) @ 25degC	15A

Temperature - Test	-55 to 150	Operating Temperature	+ 150 C
Operating Temperature - Junction	125C

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