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CSD75205W1015

Manufacturer	Texas Instruments Incorporated
Description	Trans MOSFET P-CH 20V 1.2A 6-Pin DSBGA T/R MOSFET PCH -20V -1.2A 6DSBGA MOSFET Dual PCh NexFET Pwr MOSFET MOSFET, PP CH, 20V, 1.2A, 6DSBGA
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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FET Type	2 P-Channel (Dual)	Fall Time	17 ns
Vgs (Max)	-6 V	FET Feature	Logic Level Gate
Gate Charge	1.6 nC	Power - Max	750mW
Power - Rated	0.75 W	Fall Time (Typ)	17 ns
Rise Time (Typ)	5.3 ns	Transistor Type	P-Channel
Delay to 1st Tap	32 ns	Number of Elements	2
Vgs(th) (Max) @ Id	850mV @ 250µA	Voltage - Breakdown	20 V
Voltage - Threshold	:-650mV	Resistance - RDS(On)	:0.095ohm
Rds On (Max) @ Id, Vgs	145@2.5V mOhm	Power Dissipation (Max)	:750mW
Propagation Delay (Max)	5.3 ns	Vce(on) (Max) @ Vge, Ic	- 20 V
On-State Resistance (Max)	:0.145ohm	Current Transfer Ratio (Min)	5 S
Gate Charge (Qg) (Max) @ Vgs	2.2nC @ 4.5V	Switch Time (Ton, Toff) (Max)	6.3 ns
Drain to Source Voltage (Vdss)	20V	Current - Peak Pulse (10/1000us)	1.2 A
Voltage - Gate Trigger (Vgt) (Max)	- 6 V	Current - Drain (Idss) @ Vds (Vgs=0)	- 1.2 A
Input Capacitance (Ciss) (Max) @ Vds	265pF @ 10V	Current - Continuous Drain (Id) @ 25degC	1.2A

Operating Temperature

-55 to 150 °C

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